Transys
Electronics
L I M I T E D
PNP EPITAXIAL PLANAR SILICON TRANSISTOR
MPSA92
TO-92
CBE
E
BC
Designed For General Purpose Applications Requiring High Breakdown Voltages,
Low Saturation Voltages And Low Capacitance.
Complementary is MPSA42
ABSOLUTE MAXIMUM RATINGS(Ta=25deg C unless otherwise specified)
DESCRIPTION
SYMBOL
VALUE
Collector -Emitter Voltage
Collector -Base Voltage
Emitter -Base Voltage
Collector Current Continuous
Power Dissipation Ta=25 degC
Derate Above 25 deg C
Power Dissipation Tc=25 degC
Derate Above 25 deg C
Operating And Storage Junction
Temperature Range
THERMAL RESISTANCE
Junction to Case
Junction to Ambient
VCEO
VCBO
VEBO
IC
PD
PD
Tj, Tstg
300
300
5.0
500
625
5.0
1.5
12
-55 to +150
UNIT
V
V
V
mA
mW
mW/deg C
W
mW/deg C
deg C
Rth(j-c)
Rth(j-a)
83.3
200
deg C/W
deg C/W
ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified)
DESCRIPTION
SYMBOL TEST CONDITION
MIN
VCEO*
IC=1mA,IB=0
300
Collector -Emitter Voltage
VCBO
IC=100uA.IE=0
300
Collector -Base Voltage
VEBO
IE=10uA, IC=0
5.0
Emitter-Base of Voltage
ICBO
VCB=200V, IE=0
-
Collector-Cut off Current
IEBO
VEB=3V, IC=0
-
Emitter-Cut off Current
hFE*
IC=1mA,VCE=10V
25
DC Current Gain
IC=10mA,VCE=10V
40
IC=30mA,VCE=10V
25
-
Collector Emitter Saturation Voltage
VCE(Sat)* IC=20mA,IB=2mA
VBE(Sat) * IC=20mA,IB=2mA
-
Base Emitter Saturation Voltage
Dynamic Characteristics
Transition Frequency
Collector Base Capacitance
TYP
-
-
-
-
-
-
-
-
-
-
MAX
-
-
-
250
100
-
-
-
0.50
0.9
UNIT
V
V
V
nA
nA
V
V
ft
Ccb
VCE=20V,IC=10mA,
f=100MHz
VCB=20V, IE=0
f=1MHz
50
-
-
-
-
6.0
MHz
pF
*Pulse Test: Pulse Width=300us, Duty Cycle=2%
TRSYS [ TRANSYS Electronics Limited ]
