Transys
Electronics
L I M I T E D
NPN SILICON PLANAR SWITCHING TRANSISTORS
PN2222
PN2222A
CBE
TO-92
E
BC
Complementary Silicon Transistors For Switching And Linear Applications
DC Amplifier & Driver For Industrial Applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25deg C unless otherwise specified)
DESCRIPTION
SYMBOL
2222
Collector -Emitter Voltage
Collector -Base Voltage
Emitter -Base Voltage
Collector Current Continuous
Power Dissipation @Ta=25 degC
Derate Above 25deg C
@ Tc=25 degC
Derate Above 25deg C
Operating And Storage Junction
Temperature Range
THERMAL RESISTANCE
Junction to Case
Junction to Ambient
VCEO
VCBO
VEBO
IC
PD
PD
Tj, Tstg
30
60
5.0
2222A
40
75
6.0
UNIT
V
V
V
mA
mW
mW/deg C
W
mW/deg C
deg C
600
625
5
1.5
12
-55 to +150
Rth(j-c)
Rth(j-a)
83.3
200
deg C/W
deg C/W
ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified)
DESCRIPTION
SYMBOL TEST CONDITION
2222
VCEO
IC=10mA,IB=0
>30
Collector -Emitter Voltage
VCBO
IC=10uA.IE=0
>60
Collector -Base Voltage
VEBO
IE=10uA, IC=0
>5.0
Emitter-Base Voltage
ICBO
VCB=50V, IE=0
<10
Collector-Cut off Current
VCB=60V, IE=0
-
Ta=150 deg C
VCB=50V, IE=0
<10
VCB=60V, IE=0
-
ICEX
VCE=60V, VBE=3V
-
ICEO
VCE=10V, IB=0
<10
IEBO
VEB=3V, IC=0
-
Emitter-Cut off Current
IBEX
VCE=60V, VBE=3V
-
Base-Cut off Current
<0.4
Collector Emitter Saturation Voltage
VCE(Sat)* IC=150mA,IB=15mA
IC=500mA,IB=50mA
<1.6
VBE(Sat) * IC=150mA,IB=15mA
<1.3
Base Emitter Saturation Voltage
IC=500mA,IB=50mA
<2.6
2222A
>40
>75
>6.0
-
<10
-
<10
<10
<10
<10
<20
<0.3
<1.0
0.6-1.2
<2.0
UNIT
V
V
V
nA
nA
uA
uA
nA
nA
nA
nA
V
V
V
V
TRSYS [ TRANSYS Electronics Limited ]
