Transys
Electronics
L I M I T E D
PNP SILICON PLANAR EPITAXIAL TRANSISTORS
PN4354
PN4355
PN4356
TO-92
Plastic Package
E
BC
General Purpose Amplifiers
DESCRIPTION
Collector Emitter Voltage
Collector Base Voltage
Emitter Base Voltage
Collector Current - Continuous
Power Dissipation@Ta=25°C
Power Dissipation@ Tc=25°C
Operating And Storage Junction
Temperature Range
ELECTRICAL CHARACTERISTICS (Ta=25°C Unless Otherwise Specified)
DESCRIPTION
SYMBOL TEST CONDITION
4354
Collector Emitter Voltage
Collector Base Voltage
Emitter Base Voltage
Collector-Cut off Current
V
CEO(sus)*
V
CBO
V
EBO
I
CBO
I
C
=10mA,I
B
=0 (pulsed)
I
C
=10uA,I
E
=0
I
E
=10uA,I
C
=0
V
CB
=50V, I
E
= 0
Vc
B
=50V, I
E
= 0,
Ta =75°C
V
BE
=4V,I
C
= 0
>60
>60
SYMBOL
V
CEO
V
CBO
V
EBO
I
C
P
D
P
D
T
j
, T
stg
4354
60
60
4355
60
60
5
500
625
1.0
-55 to +150
4356
80
80
UNITS
V
V
V
mA
mW
mW
°C
4355
>60
>60
>5
4356
>80
>80
<50
<5
<100
UNITS
V
V
V
nA
uA
nA
Emitter Cut off Current
DC Current Gain
I
EBO
h
FE
*
V
CE
=10V,I
C
=100uA
V
CE
=10V,I
C
=1mA
V
CE
=10V,I
C
=10mA
V
CE
=10V,I
C
=100mA
V
CE
=10V,I
C
=500mA
>25
>40
50-500
>40
>30
>60
>75
100-400
>75
>75
>25
>40
50-250
>40
>30
Commom Emitter Small
Signal Current Gain
l h
fe
l
I
C
=50mA, V
CE
=10V
f=100MHz
1.0-5.0
1.0 - 1.5
1.0 - 5.0
Collector Emitter Sat Voltage
V
CE
(sat) * I
C
=150mA,I
B
=15mA
I
C
=500mA,I
B
=50mA
I
C
=1A,I
B
=100mA
PN4355
<0.15
<0.5
<0.15
<0.5
<1.0
<0.15
<0.5
V
V
V
TRSYS [ TRANSYS Electronics Limited ]
