RB706F-40
FEATURES
SCHOTTKY BARRIER DIODE
SOT-323
1. 25¡ À0. 05
1. 01 R
EF
Power dissipation
P
D
:
200
mW (Tamb=25℃)
1. 30¡ À0. 03
2. 30¡ À0. 05
Collector current
30 mA
I
F
:
Collector-base voltage
40 V
V
R
:
Operating and storage junction temperature range
T
J
, T
stg
: -55℃ to +150℃
Unit: mm
CIRCUIT:
1
3
2
MARKING: 3J
ELECTRICAL CHARACTERISTICS (Tamb=25℃
Parameter
Reverse breakdown voltage
Reverse voltage leakage current
Forward voltage
Diode capacitance
Symbol
V
(BR)
I
R
V
F
C
D
unless otherwise specified)
Test
conditions
MIN
40
1
0.37
5
MAX
UNIT
V
I
R
= 100
µ
A
V
R
=10V
I
F
=1mA
V
R
=1V, f=1MHz
0. 30
2. 00¡ À0. 05
µA
V
pF