RB715W
FEATURES:
Power dissipation
P
D:
SCHOTTKY BARRIER DIODE
SOT-523
200
mW (Tamb=25℃)
Collector current
30 mA
I
F
:
Collector-base voltage
40
V
V
R
:
Operating and storage junction temperature range
T
J
, T
stg
: -55℃ to +150℃
CIRCUIT:
1
3
2
MARKING: 3D
ELECTRICAL CHARACTERISTICS (Tamb=25℃
unless otherwise specified)
Parameter
Reverse breakdown voltage
Reverse voltage leakage current
Forward voltage
Diode capacitance
Symbol
V
(BR)
I
R
V
F
C
D
Test
conditions
MIN
40
MAX
UNIT
V
I
R
= 100
µ
A
V
R
=10V
I
F
=1mA
V
R
=1V, f=1MHz
1
0.37
2
µA
V
pF