RB751S-40
Schottky barrier Diodes
FEATURES
Small surface mounting type
Low reverse current and low forward voltage
High reliability
Maximum Ratings and Electrical Characteristics, Single Diode @T
A
=25℃
Parameter
Peak reverse voltage
DC reverse voltage
Mean rectifying current
Peak forward surge current
Junction temperature
Storage temperature
Symbol
V
RM
V
R
I
O
I
FSM
T
j
T
stg
Limits
40
30
30
200
125
-55~+125
Unit
V
V
mA
mA
℃
℃
Electrical Ratings @T
A
=25℃
Parameter
Forward voltage
Reverse current
Capacitance between terminals
Symbol
V
F
I
R
C
T
2
Min.
Typ.
Max.
0.37
0.5
Unit
V
µA
pF
Conditions
I
F
=1mA
V
R
=30V
V
R
=1V, f=1MHZ