Transys
Electronics
L I M I T E D
TO-220 Plastic-Encapsulated Transistors
TIP41A/41B/41C
FEATURES
Power dissipation
P
CM:
2
W (Tamb=25℃)
3. EMITTER
TRANSISTOR (NPN)
TO-220
1. BASE
2. COLLECTOR
Collector current
I
CM:
6
A
Collector-base voltage
V
(BR)CBO
: TIP41A : 60 V
TIP41B : 80 V
TIP41C : 100 V
Operating and storage junction temperature range
T
J
, T
stg
: -55℃ to +150℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃
Parameter
41A
Collector-base breakdown voltage
41B
41C
41A
Collector-emitter breakdown voltage
41B
41C
Emitter-base breakdown voltage
41A
41B
41C
41A
41B
41C
V
(BR)
EBO
I
E
= 1mA, I
C
=0
V
CB
=60V, I
E
=0
V
CB
=80V, I
E
=0
V
CB
=100V, I
E
=0
V
CE
= 30V, I
B
= 0
I
CEO
V
CE
= 30V, I
B
= 0
V
CE
= 60V, I
B
= 0
I
EBO
h
FE(1)
DC current gain
h
FE(2)
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
V
CE(sat)
V
BE(on
f
T
V
CE
=4 V, I
C
= 3A
I
C
=6A, I
B
=0.6A
V
CE
= 4V, I
C
=6A
V
CE
=10V , I
C
=0.5A
f =1MHz
3
15
V
EB
=5V, I
C
=0
V
CE
= 4V, I
C
= 0.3A
30
V
(BR)
CEO
Ic= 30mA, I
B
=0
V
(BR)
CBO
Ic= 1mA, I
E
=0
123
unless otherwise specified)
Test
conditions
MIN
60
80
100
60
80
100
5
V
V
V
MAX
UNIT
Symbol
Collector cut-off current
I
CBO
0.4
mA
Collector cut-off current
0.7
mA
Emitter cut-off current
1
mA
75
1.5
2
V
V
MH
Z
TRSYS [ TRANSYS Electronics Limited ]
