深圳德江源电子有限公司
0755-82966416 15989331311
TSD2N60M / TSU2N60M
600V N-Channel MOSFET
General Description
This Power MOSFET is produced using Truesemi‘s
advanced planar stripe DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switched mode power supplies,
active power factor correction based on half bridge
topology.
Features
•
•
•
•
•
•
1.9A, 600V, R
DS(on)
= 5.00Ω @V
GS
= 10 V
Low gate charge ( typical 9nC)
High ruggedness
Fast switching
100% avalanche tested
Improved dv/dt capability
D
●
G
D S
G
D
◀
S
G
▲
●
●
D-PAK ( TO-252 )
I-PAK ( TO-251 )
S
Absolute Maximum Ratings
Symbol
V
DSS
I
D
I
DM
V
GSS
E
AS
E
AR
dv/dt
P
D
T
J
, T
STG
T
L
T
C
= 25°Cunless otherwise noted
Parameter
Drain-Source Voltage
- Continuous (T
C
= 25°C)
Drain Current
- Continuous (T
C
= 100°C)
Drain Current
- Pulsed
(Note 1)
TSD2N60M / TSU2N60M
600
1.9
1.14
7.6
±
30
(Note 2)
(Note 1)
(Note 3)
Units
V
A
A
A
V
mJ
mJ
V/ns
W
W/°C
°C
°C
Gate-Source Voltage
Single Pulsed Avalanche Energy
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
C
= 25°C)
120
4.4
4.5
44
0.35
-55 to +150
300
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
* Drain current limited by maximum junction temperature.
Thermal Characteristics
Symbol
R
θJC
R
θJA
R
θJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient*
Thermal Resistance, Junction-to-Ambient
Typ
-
-
-
Max
2.87
50
110
Units
°C/W
°C/W
°C/W
TRUMPOWER [ Tumbler Technologies + TRUMPower ]
