BAS116
225mW SMD Switching Diode
Small Signal Diode
SOT-23
A
F
Features
Low power loss, high current capability, low V
F
Surface device type mounting
Moisture sensitivity level 1
Matte Tin(Sn) lead finish with Nickel(Ni) underplate
Pb free version and RoHS compliant
Green compound (Halogen free) with suffix "G" on
packing code and prefix "G" on date code
C
D
G
B
E
Mechanical Data
Case : SOT- 23 small outline plastic package
Terminal: Matte tin plated, lead free., solderable
per MIL-STD-202, Method 208 guaranteed
High temperature soldering guaranteed: 260°C/10s
Weight : 0.008gram (approximately)
Dimensions
A
B
C
D
E
F
G
Unit (mm)
Min
1.50
3.55
0.45
2.60
1.05
0.08
Max
1.70
3.85
0.65
2.80
1.25
0.15
Unit (inch)
Min
0.059
0.140
0.018
0.102
0.041
0.003
Max
0.067
0.152
0.026
0.11
0.049
0.006
0.02 REF
0.50 REF
Ordering Information
Part No.
BAS116 RF
Package
SOT-23
Packing
3Kpcs/7" Reel
Maximum Ratings and Electrical Characteristics
Rating at 25°C ambient temperature unless otherwise specified.
Maximum Ratings
Type Number
Power Dissipation
Repetitive Peak Reverse Voltage
Mean Forward Current
Non-Repetitive Peak Forward Surge Current @ t= 1.0s
Thermal Resistance (Junction to Ambient) (Note 1)
Junction and Storage Temperature Range
Symbol
P
D
V
RRM
Io
I
FSM
RθJA
T
J
, T
STG
Value
225
75
200
500
330
-55 to + 150
Units
mW
V
mA
mA
°C/W
°C
Electrical Characteristics
Type Number
Reverse Breakdown Voltage
I
R
=
I
F
=
Forward Voltage
I
F
=
I
F
=
I
F
=
Reverse Leakage Current
Junction Capacitance
Reverse Recovery Time (Note 2)
V
R
=
100µA
1.0mA
10mA
50mA
150mA
75V
I
R
C
J
Trr
V
F
Symbol
V
(BR)
Min
75
-
-
-
-
-
-
-
Max
-
0.9
1.0
1.1
1.25
5
2.0
3.0
nA
pF
ns
V
Units
V
V
R
=0, f=1.0MHz
Notes:1. Valid provided that electrodes are kept at ambient temperature
Notes:2. Reverse Recovery Test Conditions: I
F
=10mA, I
R
=10mA, R
L
=100Ω, I
RR
=1mA
Version : B09
TSC [ TAIWAN SEMICONDUCTOR COMPANY, LTD ]
