BAS70 / -04 / -05 / -06
200m Watts Surface Mount Schottky Barrier Diode
SOT-23
0.020(0.51)
0.015(0.37)
Features
Low turn-on voltage
Fast switching
PN junction guard Ring for transient and ESD
protection
0.080(2.05)
0.070(1.78)
0.024(0.61)
0.018(0.45)
0.120(3.05)
0.104(2.65)
0.055(1.40)
0.047(1.19)
0.098(2.50)
0.083(2.10)
0.041(1.05)
0.047(0.89)
Mechanical Data
Case: SOT-23, Molded plastic
Terminals: Solderable per MIIL-STD-202,
Method 208
Marking & Polarity: See diagram
Weight: 0.008 grams
0.043(1.10)
0.035(0.89)
0.006(0.15)
0.001(0.013)
0.024(0.61)
0.018(0.45)
0.007(0.178)
0.003(0.076)
Dimensions in inches and (millimeters)
BAS70 Marking: 73
BAS70-04 Marking: 74
BAS70-05 Marking: 75
BAS70-06 Marking: 76
Maximum Ratings
Type Number
TA=
25
o
C unless otherwise specified
Symbol
V
RRM
V
RWM
V
R
V
R(RMS)
BAS70
70
49
70
100
200
625
-55 to + 125
-65 to + 150
Units
V
V
mA
mA
mW
K/W
o
o
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Forward Continuous Current (Note 1)
Non-Repetitive Peak Forward Surge Current
@ t
≦1.0s
Power Dissipation (Note 1)
Thermal Resistance Junction to Ambient Air
(Note 1)
Operating Junction Temperature Range
Storage Temperature Range
I
F
I
FSM
Pd
R
θJA
T
J
T
STG
Symbol
V
(BR)
I
R
V
F
Cj
trr
Min
70
_
_
_
_
C
C
Electrical Characteristics
Type Number
Reverse Breakdown Voltage (Note 2), IR=10uA
Reverse Leakage Current tp<300us, VR=50V
Forward Voltage Drop
Junction Capacitance
Notes:
tp=300us, IF=1.0mA
tp<300us, IF=15mA
VR=0, f=1.0MHz
Max
100
410
1000
2.0
5.0
Units
nA
mV
pF
nS
Reverse Recovery Time (Note 3)
1. Valid Provided that Terminals are Kept at Ambient Temperature.
2. Test Period < 3000uS.
3. Reverse Recovery Test Conditions: IF=IR=10mA, Irr=1.0mA, RL=100Ω.
- 14 -
Version: C07
TSC [ TAIWAN SEMICONDUCTOR COMPANY, LTD ]
