MBR1035CT - MBR10200CT
10.0 AMPS. Schottky Barrier Rectifiers
TO-220AB
Features
Plastic material used carries Underwriters
Laboratory Classifications 94V-0
Metal silicon junction, majority carrier conduction
Low power loss, high efficiency
High current capability, low forward voltage drop
High surge capability
For use in low voltage, high frequency inverters, free
wheeling, and polarity protection applications
Guardring for overvoltage protection
High temperature soldering guaranteed:
260
o
C/10 seconds,0.25”(6.35mm)from case
Mechanical Data
Cases: JEDEC TO-220AB molded plastic body
Terminals: Pure tin plated, lead free. solderable per
MIL-STD-750, Method 2026
Polarity: As marked
Mounting position: Any
Mounting torque: 5 in. - lbs. max
Weight: 0.08 ounce, 2.24 grams
Dimensions in inches and (millimeters)
Rating at 25
o
C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Maximum Ratings and Electrical Characteristics
Type Number
Symbol
V
RRM
V
RMS
V
DC
I
(AV)
I
FRM
I
FSM
I
RRM
V
F
0.70
0.57
0.80
0.67
MBR MBR MBR MBR MBR MBR MBR MBR
1035 1045 1050 1060 1090 10100 10150 10200
CT
CT
CT
CT
CT
CT
CT
CT
Units
V
V
V
A
A
A
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
at Tc=125
O
C
Peak Repetitive Forward Current (Rated V
R
,
Square Wave, 20KHz) at Tc=125
o
C
Peak Forward Surge Current, 8.3 ms Single Half
Sine-wave Superimposed on Rated Load
(JEDEC method )
Peak Repetitive Reverse Surge Current (Note 1)
Maximum Instantaneous Forward Voltage at:
(Note 2)
I
F
=5A, T
C
=25
o
C
I
F
=5A, T
C
=125
o
C
o
I
F
=10A, T
C
=25 C
I
F
=10A, T
C
=125
o
C
Maximum Instantaneous Reverse Current
@ Tc =25
o
C at Rated DC Blocking Voltage
@ Tc=125
o
C
(Note 2)
Voltage Rate of Change (Rated V
R
)
Maximum Typical Thermal Resistance (Note 3)
Operating Junction Temperature Range
Storage Temperature Range
35
24
35
45
31
45
50
35
50
60
42
60
90
63
90
10
32
120
100
70
100
150
105
150
200
140
200
1.0
0.80
0.65
0.90
0.75
0.1
15
10
10,000
1.5
-65 to +150
-65 to +175
2.0
0.85
0.75
0.95
0.85
0.5
0.88
0.78
0.98
0.88
A
V
I
R
dV/dt
R
θJC
T
J
T
STG
mA
mA
V/uS
o
C/W
o
C
o
C
Notes:
1. 2.0us Pulse Width, f=1.0 KHz
2. Pulse Test: 300us Pulse Width, 1% Duty Cycle
3. Thermal Resistance from Junction to Case Per Leg, Mount on Heatsink Size of 2 in x 3 in x 0.25in
Al-Plate.
- 108 -
Version: B07
TSC [ TAIWAN SEMICONDUCTOR COMPANY, LTD ]
