MBR1635 - MBR16150
16.0 AMPS. Schottky Barrier Rectifiers
TO-220AC
.185(4.70)
.175(4.44)
.412(10.5)
MAX
.113(2.87)
.103(2.62)
DIA
.154(3.91)
.148(3.74)
.27(6.86)
.23(5.84)
.594(15.1)
.587(14.9)
PIN1
.16(4.06)
.14(3.56)
.56(14.22)
.53(13.46)
.037(0.94)
.027(0.68)
2
.11(2.79)
.10(2.54)
.055(1.40)
.045(1.14)
Features
Plastic material used carries Underwriters
Laboratory Classifications 94V-0
Metal silicon junction, majority carrier conduction
Low power loss, high efficiency
High current capability, low forward voltage drop
High surge capability
For use in low voltage, high frequency inverters,
free wheeling, and polarity protection applications
Guardring for overvoltage protection
High temperature soldering guaranteed:
o
260 C/10 seconds,0.25”(6.35mm)from case
.205(5.20)
.195(4.95)
.025(0.64)
.014(0.35)
Mechanical Data
Cases: JEDEC TO-220AC molded plastic body
Terminals: Pure tin plated, lead free. solderable
per MIL-STD-750, Method 2026
Polarity: As marked
Mounting position: Any
Mounting torque: 5 in. - lbs. max
Weight: 0.08 ounce, 2.24 grams
PIN 1
PIN 2
CASE
Dimensions in inches and (millimeters)
Rating at 25
o
C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Symbol
MBR MBR MBR MBR MBR MBR MBR
Units
Type Number
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
O
at Tc=125 C
Peak Repetitive Forward Current (Rated V
R
,
o
Square Wave, 20KHz) at Tc=125 C
Peak Forward Surge Current, 8.3 ms Single Half
Sine-wave Superimposed on Rated Load (JEDEC
method )
Peak Repetitive Reverse Surge Current (Note 1)
Maximum Instantaneous Forward Voltage at:
o
(Note 2)
I
F
=16A, T
C
=25 C
o
I
F
=16A, T
C
=125 C
Maximum Instantaneous Reverse Current
o
@Tc=25 C at Rated DC Blocking Voltage (Note 2)
o
@ Tc=125 C
Voltage Rate of Change (Rated V
R
)
Typical Junction Capacitance
M
aximum
T
ypical
T
hermal Resistance(Note 3)
Maximum Ratings and Electrical Characteristics
V
RRM
V
RMS
V
DC
I
(AV)
I
FRM
I
FSM
I
RRM
V
F
I
R
dV/dt
Cj
R
θJC
T
J
T
STG
1635
35
24
35
1645
45
31
45
1650
50
35
50
1660
60
42
60
16
32
150
1690 16100 16150
90
100
150
63
70
105
90
100
150
V
V
V
A
A
A
1.0
0.63
0.57
0.75
0.65
0.5
0.85
0.75
0.95
0.92
A
V
mA
mA
V/uS
pF
o
0.5
15
Operating Junction Temperature Range
Storage Temperature Range
0.5
10
10,000
500
3.0
-65 to +150
-65 to +175
0.3
7.5
0.1
5
C/W
o
C
o
C
Notes:
1. 2.0us Pulse Width, f=1.0 KHz
2. Pulse Test: 300us Pulse Width, 1% Duty Cycle
3. Thermal Resistance from Junction to Case Per Leg with Heatsink Size of 2” x 3”x 0.25” Al-Plate.
Version: A06
TSC [ TAIWAN SEMICONDUCTOR COMPANY, LTD ]
