MBR3035PT - MBR30150PT
30.0 AMPS. Schottky Barrier Rectifiers
TO-3P/TO-247AD
Features
Plastic material used carries Underwriters
Laboratory Classifications 94V-0
Metal silicon junction, majority carrier conduction
Low power loss, high efficiency
High current capability, low forward voltage drop
High surge capability
For use in low voltage, high frequency inverters, free
wheeling, and polarity protection applications
Guardring for overvoltage protection
High temperature soldering guaranteed:
o
260 C/10 seconds,0.17”(4.3mm)from case
Mechanical Data
Cases: JEDEC TO-3P/TO-247AD molded plastic
body
Terminals: Pure tin plated, lead free. solderable per
MIL-STD-750, Method 2026
Polarity: As marked
Mounting position: Any
Mounting torque: 10 in. - lbs. max
Weight: 0.2 ounce, 5.6 grams
Dimensions in inches and (millimeters)
Rating at C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Symbol
MBR MBR
Type Number
3035
PT
3045
PT
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
(SEE F1G. 1)
Peak Repetitive Forward Current (Rated V
R
, Square Wave,
20KHz) at Tc=105
o
C
Peak Forward Surge Current, 8.3 ms Single Half Sine-wave
Superimposed on Rated Load (JEDEC method )
Peak Repetitive Reverse Surge Current (Note 2)
Maximum Instantaneous Forward Voltage at (Note 1)
I
F
=15A, Tc=25
o
C
I
F
=15A, Tc=125
o
C
o
I
F
=30A, Tc=25 C
o
I
F
=30A, Tc=125 C
Maximum Instantaneous Reverse Current
@ Tc=25 C
at Rated DC Blocking Voltage Per Leg(Note 2) @ Tc=125
o
C
Voltage Rate of Change at (Rated V
R
)
Maximum Thermal Resistance Per Leg(Note 3)
Operating Junction Temperature Range
Storage Temperature Range
o
Maximum Ratings and Electrical Characteristics
o
MBR
3050
PT
MBR
3060
PT
MBR
3090
PT
MBR MBR
30100 30150
PT
PT
Units
V
V
V
A
A
A
V
RRM
V
RMS
V
DC
I
(AV)
I
FRM
I
FSM
I
RRM
V
F
I
R
dV/dt
R
θJC
T
J
T
STG
35
24
35
45
31
45
50
35
50
60
42
60
30
30
200
90
63
90
100
70
100
150
105
150
2.0
－
0.60
0.82
0.72
1.0
20
10,000
15
0.75
0.65
－
－
1.0
0.85
0.75
－
－
0.5
10
1,000
1.4
-65 to +150
-65 to +175
o
A
0.95
0.92
1.02
0.98
V
mA
mA
V/uS
C/W
o
C
o
C
Notes:
1. 2.0us Pulse Width, f=1.0 KHz
2. Pulse Test: 300us Pulse Width, 1% Duty Cycle
3. Thermal Resistance from Junction to case Per Leg
Version: A06
TSC [ TAIWAN SEMICONDUCTOR COMPANY, LTD ]
