MBR4035PT - MBR40150PT
40.0 AMPS. Schottky Barrier Rectifiers
TO-3P/TO-247AD
Features
Plastic material used carries Underwriters Laboratory
Classifications 94V-0
Metal silicon rectifier, majority carrier conduction
Low power loss, high efficiency
High current capability, low forward voltage drop
High surge capability
For use in low voltage, high frequency inverters, free
wheeling, and polarity protection applications
Guardring for overvoltage protection
High temperature soldering guaranteed:
o
260 C/10 seconds,0.17”(4.3mm)from case
Mechanical Data
Cases: JEDEC TO-3P/TO-247AD molded plastic
body
Terminals: Pure tin plated, lead free. solderable per
MIL-STD-750, Method 2026
Polarity: As marked
Mounting position: Any
Mounting torque: 10 in. - lbs. max
Weight: 0.2 ounce, 5.6 grams
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characteristics
o
Rating at 25 C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Symbol
MBR MBR
Type Number
4035
PT
4045
PT
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
at Tc=125
O
C
Peak Repetitive Forward Current (Rated V
R
, Square
Wave, 20KHz) at Tc=120
o
C
Peak Forward Surge Current, 8.3 ms Single Half
Sine-wave Superimposed on Rated Load (JEDEC
method )
Peak Repetitive Reverse Surge Current (Note 1)
Maximum Instantaneous Forward Voltage at (Note 2)
I
F
=20A, Tc=25
o
C
I
F
=20A, Tc=125
o
C
I
F
=40A, Tc=25
o
C
I
F
=40A, Tc=125
o
C
MBR
4050
PT
MBR
4060
PT
MBR
4090
PT
MBR MBR
40100 40150
PT
PT
Units
V
V
V
A
A
A
V
RRM
V
RMS
V
DC
I
(AV)
I
FRM
I
FSM
I
RRM
V
F
35
24
35
45
31
45
50
35
50
60
42
60
40
40
330
90
63
90
100
70
100
150
105
150
2.0
0.75
0.65
0.80
0.75
0.77
0.67
–
–
1.0
0.84
0.74
–
–
0.95
0.92
1.02
0.98
A
V
Maximum Instantaneous Reverse Current
@ Tc=25
o
C
at
R
ated
DC
Blocking
V
oltage
P
er
L
eg
@ Tc=125
o
C
(Note 1)
Voltage Rate of Change at (Rated V
R
)
Typical Thermal Resistance Per Leg (Note 3)
Operating Junction Temperature Range
Storage Temperature Range
I
R
dV/dt
R
θJC
T
J
1.0
30
20
1,000
1.2
-65 to +150
-65 to +175
0.5
10
o
mA
mA
V/uS
10,000
Notes:
T
STG
1. 2.0us Pulse Width, f=1.0 KHz
2. Pulse Test: 300us Pulse Width, 1% Duty Cycle
3. Thermal Resistance from Junction to Case Per Leg
C/W
o
C
o
C
Version: A06
TSC [ TAIWAN SEMICONDUCTOR COMPANY, LTD ]
