MBR735 - MBR7150
7.5 AMPS. Schottky Barrier Rectifiers
TO-220AC
.185(4.70)
.175(4.44)
.412(10.5)
MAX
.113(2.87)
.103(2.62)
DIA
.154(3.91)
.148(3.74)
.27(6.86)
.23(5.84)
.594(15.1)
.587(14.9)
PIN1
.16(4.06)
.14(3.56)
.56(14.22)
.53(13.46)
.037(0.94)
.027(0.68)
2
.11(2.79)
.10(2.54)
.055(1.40)
.045(1.14)
Features
Plastic material used carries Underwriters
Laboratory Classifications 94V-0
Metal silicon rectifier, majority carrier conduction
Low power loss, high efficiency
High current capability, low forward voltage drop
High surge capability
For use in low voltage, high frequency inverters,
free wheeling, and polarity protection applications
Guardring for overvoltage protection
High
o
temperature soldering guaranteed:
260 C/10 seconds,0.25”(6.35mm)from case
.205(5.20)
.195(4.95)
.025(0.64)
.014(0.35)
PIN 1
Mechanical Data
Cases: JEDEC TO-220AC molded plastic body
Terminals: Pure tin plated, lead free. solderable per
MIL-STD-750, Method 2026
Polarity: As marked
Mounting position: Any
Mounting torque: 5 in. - lbs. max
Weight: 0.08 ounce, 2.24 grams
PIN 2
CASE
Dimensions in inches and (millimeters)
Rating at 25
o
C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Symbol MBR MBR MBR MBR MBR MBR MBR
Units
Type Number
735 745 750 760 790 7100 7150
Maximum Recurrent Peak Reverse Voltage
V
RRM
35
45
50
60
90
100
150
V
Maximum RMS Voltage
V
RMS
24
31
35
42
63
70
105
V
Maximum DC Blocking Voltage
V
DC
35
45
50
60
90
100
150
V
Maximum Average Forward Rectified Current
I
(AV)
7.5
A
See Fig. 1
Peak Repetitive Forward Current (Square Wave, 20KHz) at
o
Tc=105 C
Peak Forward Surge Current, 8.3 ms Single Half Sine-wave
Superimposed on Rated Load (JEDEC method )
Peak Repetitive Reverse Surge Current (Note 1)
Maximum Instantaneous Forward Voltage at (Note 2)
I
F
=7.5A,Tc=25℃
I
F
=7.5A,Tc=125℃
I
F
=15A,Tc=25℃
I
F
=15A,Tc=125℃
Maximum Instantaneous Reverse Current @ Tc =25 C
at Rated DC Blocking Voltage (Note 1)
Voltage Rate of Change (Rated V
R
)
Typical Junction Capactance
Maximum Thermal Resistance, (Note 3)
Operating Junction Temperature Range
Storage Temperature Range
Notes:
@ Tc=125 C
o
o
Maximum Ratings and Electrical Characteristics
I
FRM
I
FSM
I
RRM
V
F
I
R
dv/dt
Cj
360
1.0
－
0.57
0.84
0.72
0.75
0.65
－
－
15.0
150
0.5
0.92
0.82
－
－
0.95
0..92
－
－
A
A
A
V
mA
mA
V/uS
160
o
0.1
15.0
0.1
10
10,000
280
5.0
15.0
-65 to +150
-65 to +175
200
0.1
5.0
pF
C/W
o
o
R
θJC
R
θJA
T
J
T
STG
C
C
1. 2.0us Pulse Width, f=1.0 KHz
2. Pulse Test: 300us Pulse Width, 1% Duty Cycle
3. Mounted on Heatsink Size of 2 in x 3 in x 0.25 in Al-Plated.
Version: A06
TSC [ TAIWAN SEMICONDUCTOR COMPANY, LTD ]
