MBRF1035CT - MBRF10150CT
Isolated 10.0 AMPS. Schottky Barrier Rectifiers
ITO-220AB
Features
Plastic material used carries Underwriters Laboratory
Classifications 94V-0
Metal silicon junction, majority carrier conduction
Low power loss, high efficiency
High current capability, low forward voltage drop
High surge capability
For use in low voltage, high frequency inverters, free
wheeling, and polarity protection applications
Guardring for overvoltage protection
High temperature soldering guaranteed:
260
o
C/10 seconds,0.25”(6.35mm)from case
Mechanical Data
Cases: ITO-220AB molded plastic
Terminals: Pure tin plated, lead free. solderable per
MIL-STD-750, Method 2026
Polarity: As marked
Mounting position: Any
Mounting torque: 5 in. - lbs. max
Weight: 0.08 ounce, 2.24 grams
Dimensions in inches and (millimeters)
Rating at 25 C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Symbol
MBRF MBRF MBRF MBRF MBRF MBRF MBRF
Units
Type Number
Maximum Recurrent Peak Reverse Voltage
V
RRM
Maximum RMS Voltage
V
RMS
Maximum DC Blocking Voltage
V
DC
Maximum
o
Average Forward Rectified Current
I
(AV)
10
at T
C
=133 C
Peak Repetitive Forward Current
o
(Rated V
R
,
I
FRM
10.0
Square Wave, 20KHz) at Tc=133 C
Peak Forward Surge Current, 8.3 ms Single
I
FSM
120
Half Sine-wave Superimposed on Rated
Load (JEDEC method )
Peak Repetitive Reverse Surge Current
I
RRM
0.5
(Note 1)
Maximum Instantaneous Forward Voltage at
0.88
0.85
0.80
0.70
(Note 2)
I
F
= 5A, Tc=25
o
C
0.78
0.75
0.65
0.57
I
F
= 5A, Tc=125
o
C
V
F
0.98
0.95
0.90
0.80
I
F
=10A, Tc=25
o
C
0.88
0.85
0.75
0.67
I
F
=10A, Tc=125
o
C
Maximum Instantaneous Reverse Current
0.1
I
R
0.1
at Rated DC Blocking Voltage @Tc=25
o
C
@ Tc=125
o
C
5.0
15
10
Voltage Rate of Change, (Rated V
R
)
dV/dt
10,000
RMS Isolation
o
Voltage (t=1.0 second, R.H.
≦30%,
T
A
=25 C)
4500
(Note 4)
V
ISO
3500
(Note 5)
1500
(Note 6)
Typical Thermal Resistance Per Leg (Note3)
R
θJC
3.5
Operating Junction Temperature Range
T
J
-65 to +150
Storage Temperature Range
T
STG
-65 to +150
1. 2.0 us Pulse Width, f=1.0 KHz
2. Pulse Test: 300us Pulse Width, 1% Duty Cycle
Notes:
3. Thermal Resistance from Junction to Case Per Leg.
4. Clip Mounting (on case), where lead does not overlap heatsink with 0.110” offset.
5. Clip mounting (on case), where leads do overlap heatsink.
<
6. Screw mounting with 4-40 screw, where washer diameter is
≦
4.9 mm (0.19”)
=
1035
CT
35
24
35
1045
CT
45
31
45
1050
CT
50
35
50
1060
CT
60
42
60
1090 10100 10150
CT
CT
CT
90
100
150
63
70
105
90
100
150
V
V
V
A
A
A
A
Maximum Ratings and Electrical Characteristics
o
V
mA
mA
V/uS
V
o
C/W
o
C
o
C
- 116 -
Version: B07
TSC [ TAIWAN SEMICONDUCTOR COMPANY, LTD ]
