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MMBD7000 参数 Datasheet PDF下载

MMBD7000图片预览
型号: MMBD7000
PDF下载: 下载PDF文件 查看货源
内容描述: 双表面贴装开关二极管 [Dual Surface Mount Switching Diode]
分类和应用: 二极管开关光电二极管
文件页数/大小: 2 页 / 40 K
品牌: TSC [ TAIWAN SEMICONDUCTOR COMPANY, LTD ]
 浏览型号MMBD7000的Datasheet PDF文件第2页  
MMBD7000
Dual Surface Mount Switching Diode
Voltage Range
75 Volts
350m Watts Power Dissipation
Features
Fast switching speed
Surface mount package ideally suited for
automatic insertion
For general purpose switching applications
High conductance
0.020(0.51)
0.015(0.37)
SOT-23
0.055(1.40)
0.047(1.19)
0.098(2.50)
0.083(2.10)
Mechanical Data
Case: SOT-23, Molded plastic
Terminals: Solderable per MIIL-STD-202,
Method 208
Polarity: See diagram
Marking: KJH
Weight: 0.008 gram (approx.
)
0.080(2.05)
0.070(1.78)
0.024(0.61)
0.018(0.45)
0.120(3.05)
0.104(2.65)
0.041(1.05)
0.047(0.89)
0.043(1.10)
0.035(0.89)
0.007(0.178)
0.003(0.076)
0.006(0.15)
0.001(0.013)
0.024(0.61)
0.018(0.45)
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characteristics
Rating at 25℃ambient temperature unless otherwise specified.
Maximum Ratings
Type Number
Symbol
MMBD7000
Non-Repetitive Peak Reverse Voltage
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Forward Continuous Current (Note 1)
Average Rectifier Output Current (Note 1)
Non-Repetitive Peak Forward Surge Current
@ t=1.0uS
@ t=1.0S
Power Dissipation (Note 1)
Thermal Resistance Junction to Ambient Air
(Note 1)
Operating and Storage Temperature Range
VRM
VRRM
VRWM
VR
VR(RMS)
IFM
Io
IFSM
Pd
RθJA
T
J
, T
STG
100
75
53
300
150
2.0
1.0
350
357
-65 to + 150
Units
V
V
V
mA
mA
A
mW
K/W
O
C
Electrical Characteristics
Type Number
Symbol
Min
Max
-
0.70
0.82
1.10
1.25
1.0
3.0
100
25
2.0
4.0
Units
V
V
Reverse Breakdown Voltage (Note 3) IR=100uA
V(BR)
75
Forward Voltage
IF=1.0mA
0.55
IF= 10mA
0.67
VF
IF = 50mA
0.75
-
IF=150mA
Peak Reverse Current VR=50V
VR=100V
-
IR
VR=50V, TJ=125℃
VR=20V
Junction Capacitance VR=0, f=1.0MHz
Cj
-
Reverse Recovery Time (Note 2)
trr
-
Notes: 1. Valid Provided that Terminals are Kept at Ambient Temperature.
2. Reverse Recovery Test Conditions: IF=IR=10mA, Irr=0.1 x IR, RL=100Ω.
3. Test Period < 3000uS.
uA
nA
pF
nS
- 846 -