ELECTRICAL CHARACTERISTICS (TA=25℃ unless otherwise noted)
Device
Device
Marking
Code
GFU
GFV
GFW
GFX
GFY
GFZ
GGD
GGE
GGF
GGG
GGH
GGK
GGL
GGM
GGN
GGP
GGQ
GGR
GGS
GGT
GGU
GGV
GGW
GGX
GGY
GGZ
GHD
GHE
GHF
GHG
GHH
GHK
GHL
GHM
GHN
GHP
GHQ
GHR
Breakdown Voltage
VBR (V)
at I
T
Min
SMCJ45
SMCJ45A
SMCJ48
SMCJ48A
SMCJ51
SMCJ51A
SMCJ54
SMCJ54A
SMCJ58
SMCJ58A
SMCJ60
SMCJ60A
SMCJ64
SMCJ64A
SMCJ70
SMCJ70A
SMCJ75
SMCJ75A
SMCJ78
SMCJ78A
SMCJ85
SMCJ85A
SMCJ90
SMCJ90A
SMCJ100
SMCJ100A
SMCJ110
SMCJ110A
SMCJ120
SMCJ120A
SMCJ130
SMCJ130A
SMCJ150
SMCJ150A
SMCJ160
SMCJ160A
SMCJ170
SMCJ170A
50
50
53.3
53.3
56.7
56.7
60
60
64.4
64.4
66.7
66.7
71.1
71.1
77.8
77.8
83.3
83.3
86.7
86.7
94.4
94.4
100
100
111
111
122
122
133
133
144
144
167
167
178
178
189
189
Max
61.1
55.3
65.1
58.9
69.3
62.7
73.3
66.3
78.7
71.2
81.5
73.7
86.9
78.6
95.1
86
102
92.1
106
95.8
115
104
122
111
136
123
149
135
163
147
176
159
204
185
218
197
231
209
Test
Current
IT
(mA)
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
Stand-Off
Voltage
V
WM
(V)
45
45
48
48
51
51
54
54
58
58
60
60
64
64
70
70
75
75
78
78
85
85
90
90
100
100
110
110
120
120
130
130
150
150
160
160
170
170
Maximum
Peak Pulse
Reverse Leakage
Surge Current
@ V
WM
I
PPM
ID (uA)
(A)(Note5)
5
19
Maximum
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
21
18
20
17
19
16
18
15
16
14
16
13.8
15
12.6
13.9
11.7
13
11.3
12.5
10.4
11.5
9.8
10.7
8.8
9.7
8
8.9
7.3
8.1
6.8
7.5
5.8
6.4
5.4
6
5.1
5.7
Maximum
Clamping
Voltage at IPPM
Vc(V)
(Note5)
80.3
72.7
85.5
77.4
91.1
82.4
96.3
87.1
103
93.6
107
96.8
114
103
125
113
134
121
139
126
151
137
160
146
179
162
196
177
214
193
231
209
266
243
287
259
304
275
Notes:
1. V
BR
measure after I
T
applied for 300us, I
T
=square wave pulse or equivalent.
2. Surge current waveform per Figure. 3 and derate per Figure. 2.
3. For bipolar types having V
WM
of 10 volts and less, the I
D
limit is doubled.
4. All terms and symbols are consistent with ANSI/IEEE C62.35.
Version:G11
TSC [ TAIWAN SEMICONDUCTOR COMPANY, LTD ]
