US1A
-
US1M
1.0 Amps. Surface Mount High Efficient Rectifiers
SMA/DO-214AC
Features
Glass passivated junction chip
For surface mounted application
Low profile package
Built-in strain relief
Ideal for automated placement
Easy pick and place
Ultrafast recovery time for high efficiency
Low forward voltage, low power loss
High temperature soldering guaranteed:
260
o
C/10 seconds on terminals
Plastic material used carries Underwriters
Laboratory Classification 94V0
Mechanical Data
Cases: Molded plastic
Terminals: Solder plated, solderable per
MIL-STD-750, Method 2026
Polarity: Indicated by cathode band
Weight: 0.064 gram
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characteristics
Rating at 25
o
C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Type Number
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
@ T
L
=110
o
C
Peak Forward Surge Current, 8.3 ms Single
Half Sine-wave Superimposed on Rated
Load (JEDEC method )
Maximum Instantaneous Forward Voltage
@ 1.0A
Maximum DC Reverse Current
@ T
A
=25
o
C at Rated DC Blocking Voltage
@ T
A
=125
o
C
Maximum Reverse Recovery Time ( Note 1 )
Typical Junction Capacitance ( Note 2 )
Maximum Thermal Resistance (Note 3)
Symbol
US1A US1B
V
RRM
50
100
V
RMS
35
70
V
DC
50
100
I
(AV)
I
FSM
V
F
I
R
Trr
Cj
US1D US1G US1J US1K US1M
Units
V
V
V
A
A
200
140
200
400
280
400
1.0
30
600
420
00
800
560
800
1000
700
1000
1.0
5.0
150
50
15
1.7
V
uA
uA
nS
pF
o
75
10
75
R
θJA
27
R
θJL
Operating Temperature Range
T
J
-55 to +150
Storage Temperature Range
T
STG
-55 to + 150
1. Reverse Recovery Test Conditions: I
F
=0.5A, I
R
=1.0A, I
RR
=0.25A
Notes:
2. Measured at 1 MHz and Applied V
R
=4.0 Volts
3. P.C.B. Mounted on 0.2 x 0.2” (5.0 x 5.0mm) Copper Pad Area.
C/W
o
o
C
C
- 272 -
Version: B07
TSC [ TAIWAN SEMICONDUCTOR COMPANY, LTD ]
