Product specification
1N5177W
SOD-123
+0.1
2.7
-0.1
+0.1
0.55
-0.1
Unit: mm
+0.05
1.1
-0.05
Low Forward Voltage Drop
Guard Ring Constuction for Transient Protection
Fast Switching Time
Low Reverse Capacitance
+0.05
0.1
-0.02
+0.1
3.7
-0.1
0.1max
0.50
0.35
Absolute Maximum Ratings Ta = 25
Paramater
Peak Repetitive Reverse voltage
Working Peak Reverse Voltage
DC Blocking Volatge
RMS Reverse Voltage
Maximum Forward Current
Power Dissipation (Note1)
Thermal Resistance, Junction to Ambient Air (Note 1)
Operating Temperature Range
Storage Temperature Range
Note:
1. Part mounted on FR-4 board with recommended pad layout.
Symbol
V
RRM
V
RWM
V
R
V
R(RMS)
I
FM
P
d
I
JA
Value
70
Unit
V
49
15
333
300
-55 to+125
-55 to+150
V
mA
mW
/W
T
j
T
STG
Electrical Characteristics Ta = 25
Characteristic
Reverse Breakdown Voltage (Note 2)
Reverse Leakage Current (Note2)
Forward Voltage Drop (Note2)
Total Capacitance
Reverse Recovery Time
Note:
2. Short duration test pulse used to minimize self-heating effect.
Symbol
V
(BR)R
I
R
V
F
C
T
trr
Test Condition
I
R
= 10
A
Min
70
200
0.41
1.00
2.0
1.0
pF
ns
Typ
Max
Unit
V
nA
V
V
R
= 50 V
I
F
= 1.0 mA
I
F
= 15 mA
V
R
= 0v, f = 1.0 MHz
I
F
=I
R
= 5.0 mA
Irr = 0.1 x I
R
, R
L
= 100
Marking
Marking
SA
http://www.twtysemi.com
sales@twtysemi.com
4008-318-123
1 of 1
+0.1
1.6
-0.1
Features
TYSEMI [ TY Semiconductor Co., Ltd ]
