欢迎访问ic37.com |
会员登录 免费注册
发布采购

1N5407 参数 Datasheet PDF下载

1N5407图片预览
型号: 1N5407
PDF下载: 下载PDF文件 查看货源
内容描述: 扩散结型高电流能力和低正向压降 [Diffused Junction High Current Capability and Low Forward Voltage Drop]
分类和应用: 二极管
文件页数/大小: 2 页 / 126 K
品牌: TYSEMI [ TY Semiconductor Co., Ltd ]
 浏览型号1N5407的Datasheet PDF文件第2页  
Product specification
1N5400-1N5408
Features
Diffused Junction
High Current Capability and Low Forward
Voltage Drop
Surge Overload Rating to 200A Peak
Low Reverse Leakage Current
MaximumRatingsandElectricalCharacteristics
@ TA = 25
Parameter
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current @ T
A
= 105 *1
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave superimposed on rated load
(JEDEC Method)
Forward Voltage @ I
F
= 3.0A
Peak Reverse Current
@ T
A
= 25
V
FM
I
RM
C
j
R
JA
unless otherwise specified
1N
5400
1N
5401
1N
5402
1N
5404
1N
5406
1N
5407
1N
5408
Unit
Symbol
V
RRM
V
RWM
V
R
V
R(RMS)
I
O
50
100
200
400
600
800
1000
V
35
70
140
280
3.0
420
560
700
V
A
I
FSM
200
A
1.0
10
100
50
15
-65 to 150
25
V
A
pF
K/W
at Rated DC Blocking Voltage @ T
A
= 150
Typical Junction Capacitance *2
Typical Thermal Resistance Junction to Ambient
Operating and Storage Temperature Range
T
j
, T
STG
*1. Valid provided that leads are kept at ambient temperature at a distance of 9.5mm from the case.
*2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
http://www.twtysemi.com
sales@twtysemi.com
4008-318-123
1 of 2