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1N5711WS 参数 Datasheet PDF下载

1N5711WS图片预览
型号: 1N5711WS
PDF下载: 下载PDF文件 查看货源
内容描述: 低正向压降保护环结构瞬态Prote [Low Forward Voltage Drop Guard Ring Construction for Transient Prote]
分类和应用: 二极管
文件页数/大小: 1 页 / 58 K
品牌: TYSEMI [ TY Semiconductor Co., Ltd ]
   
Product specification
1N5711WS
SOD-323
+0.1
1.7
-0.1
Unit: mm
Features
Low Forward Voltage Drop
Guard Ring Construction for Transient Prote
Fast Switching Speed
Low Capacitance
Surface Mount Package ldeally Suited for Automatic Insertion
0.475
+0.1
2.6
-0.1
+0.05
0.3
-0.05
+0.05
0.85
-0.05
1.0max
0.375
Absolute Maximum Ratings Ta = 25
Paramater
Peak Repetitive Reverse voltage
Working Peak Reverse Voltage
DC Blocking Volatge
RMS Reverse Voltage
Forward Continuous Current
Power Dissipation (Note1)
Thermal Resistance, Junction to Ambient Air (Note 1)
Operating and Storage Temperature Range
Storage Temperature Range
Note:
1. Part mounted on FR-4 PC board with recommended pad layout.
Symbol
V
RRM
V
RWM
V
R
V
R(RMS)
I
FM
P
d
R
èJA
T
j
T
STG
49
15
150
650
-55 to+125
-55 to+150
V
mA
mW
/W
70
V
Value
Unit
Electrical Characteristics Ta = 25
Characteristic
Reverse BreakdownVoltage (Note 2)
Reverse Leakage Current (Note 2)
Forward Voltage Drop (Note 2)
Total Capacitance
Reverse Recovery Time
Note:
2. Measured with I
F
=I
R
= 10 mA,I
RR
= 0.1 x I
R
, R
L
= 100
Symbol
V
(BR)R
I
R
V
F
C
T
t
rr
Test Condition
I
R
= 10
A
Min
70
200
0.41
1.00
2.0
1.0
pF
ns
TYP
Max
Unit
V
nA
V
V
R
= 50 V
I
F
= 1.0 mA
I
F
= 15 mA
V
R
= 0 V, f = 1.0 MHz
I
F
=I
R
= 5.0 mA
Irr = 0.1 x I
R
, R
L
= 100
.
Marking
Marking
SA
http://www.twtysemi.com
sales@twtysemi.com
4008-318-123
+0.05
0.1
-0.02
+0.1
1.3
-0.1
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