Product specification
1N5817W-1N5819W
SOD-123
+0.1
2.7
-0.1
Unit: mm
+0.05
1.1
-0.05
Features
For use in low voltage, high frequency inverters
Free wheeling, and polarity protection applications.
+0.1
3.7
-0.1
+0.1
0.55
-0.1
0.1max
0.50
0.35
Absolute Maximum Ratings Ta = 25
Parameter
Non-Repetitive Peak reverse voltage
Peak repetitive Peak reverse voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current
Peak forward surge current @=8.3ms
Repetitive Peak Forward Current
Power Dissipation
Thermal Resistance Junction to Ambient
Storage temperature
Symbol
V
RM
V
RRM
V
RWM
V
R
V
R(RMS)
I
O
I
FSM
I
FRM
P
d
R
JA
1N5817W
20
20
14
1N5818W
30
30
21
1
25
625
250
500
-65 to 150
1N5819W
40
40
28
Unit
V
V
V
A
A
mA
mW
K/W
T
STG
Electrical Characteristics Ta = 25
Parameter
1N5817W
Reverse breakdown voltage
1N5818W
1N5819W
Reverse voltage leakage current
1N5817W
1N5818W
1N5819W
1N5817W
Forward voltage
1N5818W
1N5819W
Diode capacitance
C
D
V
F
I
R
V
R
=20V
V
R
=30V
V
R
=40V
I
F
=1A
I
F
=3A
I
F
=1A
I
F
=3A
I
F
=1A
I
F
=3A
V
R
=4V, f=1MHz
V
(BR)
I
R
= 1mA
Symbol
Testconditons
Min
20
30
40
1
0.45
0.75
0.55
0.875
0.6
0.9
120
mA
Typ
Max
Unit
V
+0.05
0.1
-0.02
V
V
V
pF
Marking
NO.
Marking
1N5817W
SJ
1N5818W
SK
1N5819W
SL
http://www.twtysemi.com
sales@twtysemi.com
4008-318-123
1 of 2
+0.1
1.6
-0.1
TYSEMI [ TY Semiconductor Co., Ltd ]
