Product specification
1N5820 -1N5822
DO-201AD
Features
High current capability ,low forward voltage drop
Low Power Loss, High Efficiency
High surge capability
Dimensions in inches and (millimeters)
Absolute Maximum Ratings Ta = 25
Parameter
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current *1 @ T
L
= 95
Non-Repetitive Peak Forward Surge Current 8.3ms
single half sine-wave superimposed on rated load
Forward Voltage *2
@ I
F
=3.0A
@ I
F
= 9.4A
Peak Reverse Leakage Current @ T
A
= 25
at Rated DC Blocking Voltage *2 @ T
A
= 100
Typical Thermal Resistance *3
Operating and Storage Temperature Range
R
R
JA
JL
Symbol
V
RRM
V
RWM
V
R
V
R(RMS)
I
O
I
FSM
1N5820
1N5821
1N5822
Unit
20
30
40
V
14
21
3.0
80
28
V
A
A
V
FM
0.475
0.850
0.500
0.900
2.0
20
40
10
-65 to 125
0.525
0.950
V
I
RM
mA
/W
/W
T
j
, T
STG
*1. Measured at ambient temperature at a distance of 9.5mm from the case.
*2. Short duration test pulse used to minimize self-heating effect.
*3. Thermal resistance from junction to lead vertical P.C.B. mounted, 0.500" (9.5mm) lead length with 2.5 X 2.5"
(63.5 X 63.5mm) copper pads.
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TYSEMI [ TY Semiconductor Co., Ltd ]
