欢迎访问ic37.com |
会员登录 免费注册
发布采购

1N60 参数 Datasheet PDF下载

1N60图片预览
型号: 1N60
PDF下载: 下载PDF文件 查看货源
内容描述: 低正向压降。保护环结构的瞬态保护。 [Low forward voltage drop. Guard ring construction for transient protection.]
分类和应用:
文件页数/大小: 1 页 / 59 K
品牌: TYSEMI [ TY Semiconductor Co., Ltd ]
   
Product specification
1N60
SOD-323
Unit: mm
Low forward voltage drop.
Guard ring construction for transient protection.
Negligible reverse recovery time.
0.475
+0.1
2.6
-0.1
+0.05
0.3
-0.05
Features
+0.1
1.7
-0.1
+0.05
0.85
-0.05
1.0max
0.375
Absolute Maximum Ratings Ta = 25
Parameter
Peak repetitive peak reverse voltage
Working peak
DC blocking voltage
RMS reverse voltage
Forward continuous current
Non-Repetitive Peak Forward Surge Curren @t
Power dissipation
Thermal resistance junction to ambient
Operating and Storage Temperature Range
1.0s
Symbol
V
RRM
V
RWM
V
R
V
R(RMS)
I
FM
I
FRM
P
d
R
èJA
T
j
, T
STG
28
350
1.5
200
625
-65 to +125
V
mA
A
mW
/W
40
V
Rating
Unit
Electrical Characteristics Ta = 25
Parameter
Reverse breakdown voltage
Forward Voltage Drop
Peak Reverse Current
Total Capacitance
Reverse Recovery Time
Symbol
V
(BR)R
V
FM
I
RM
C
T
t
rr
Testconditons
I
R
=10 A
I
F
= 20mA
I
F
= 200mA
V
R
= 30V
V
R
= 0V, f = 1.0MHz
I
F
= I
R
= 200mA,I
rr
= 0.1 X I
R
, R
L
= 100
50
10
Min
40
0.37
0.60
5
A
pF
ns
Typ
Max
Unit
V
V
http://www.twtysemi.com
sales@twtysemi.com
4008-318-123
0.1
+0.05
-0.02
+0.1
1.3
-0.1
1 of 1