Product specification
1SS358
Features
Small interterminal capacitance
Low forward voltage and excellent detection efficiency
+0.1
2.4
-0.1
SOT-23
+0.1
2.9
-0.1
+0.1
0.4
-0.1
Unit: mm
High breakdown voltage
+0.1
1.3
-0.1
1
+0.1
0.95
-0.1
+0.1
1.9
-0.1
2
0.55
0.4
3
+0.05
0.1
-0.01
+0.1
0.97
-0.1
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Parameter
peak reverse voltage
Forward current
Power dissipation
Junction Temperature
Storage Temperature range
Symbol
V
R
I
F
P
T
j
T
stg
Rating
55
10
150
125
-55 to + 125
Unit
V
mA
mW
Electrical Characteristics Ta = 25
Parameter
Forward voltage
Reverse voltage
Forward Current
Reverse current
Interterminal l capacitance
Symbol
V
F
V
R
I
F
I
R
C
Test Conditions
I
F
= 1 mA
I
R
=100
V
F
=1V
V
R
= 40V
V
R
= 0, f = 1.0 MHz
0.45
A
55
10
50
Min
Typ
Max
0.35
Unit
V
V
mA
A
pF
Marking
Marking
DH
+0.1
0.38
-0.1
0-0.1
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TYSEMI [ TY Semiconductor Co., Ltd ]
