Product specification
2N3904
Features
NPN silicon epitaxial planar transistor for switching and
Amplifier applications
1 EMITTER
2 BASE
3 COLLECTOR
Absolute Maximum Ratings Ta = 25
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
stg
Rating
60
40
6
0.2
0.625
150
-55 to 150
Unit
V
V
V
A
W
Electrical Characteristics Ta = 25
Parameter
Collecto- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
Symbol
V
CBO
V
CEO
V
EBO
Ic
BO
Ic
EO
I
EBO
Ic= 100 ìA
Ic= 1 mA
I
E
= 10 A
Testconditons
I
E
=0
I
B
=0
I
C
=0
Min
60
40
6
0.1
0.1
0.1
100
60
30
0.3
0.95
35
35
200
50
300
MHz
ns
V
V
ns
300
Typ
Max
Unit
V
V
V
A
A
A
V
CB
= 60 V , I
E
=0
V
CE
= 40 V , I
B
=0
V
EB
= 5V , I
C
=0
V
CE
= 1V, I
C
= 10mA
DC current gain
h
FE
V
CE
= 1V, I
C
= 50mA
V
CE
= 1V, I
C
= 100mA
Collector-emitter saturation voltage
Base - emitter saturation voltage
Delay time
Rise time
Storage time
Fall time
Transition frequency
V
CE(sat)
I
C
=50 mA, I
B
= 5mA
V
BE(sat)
I
C
= 50 mA, I
B
= 5mA
t
d
t
r
t
s
t
f
f
T
V
CC
=3.0V,V
BE
=-0.5V
I
C
=10mA,I
B1
=-I
B2
=1.0mA
V
CC
=3.0V,I
C
=10mA
I
B1
=-I
B2
=1.0mA
V
CE
= 20V, I
C
= 10mA,f=100MHz
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