DIP Type
SMD
Type
Type
MOSFET
IC
Product specification
2N7002K
SOT-23
Unit: mm
Features
Low On-Resistance: R
DS(ON)
+0.1
2.4
-0.1
+0.1
2.9
-0.1
+0.1
0.4
-0.1
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Drain
+0.1
1.3
-0.1
Low Gate Threshold Voltage
1
2
0.95
+0.1
-0.1
+0.1
1.9
-0.1
0.55
0.4
3
+0.05
0.1
-0.01
0.97
Gate
+0.1
0.38
-0.1
+0.1
-0.1
1.Base
1 GATE
2.Emitter
2 SOURCE
Gate
Protection
Diode
Source
Absolute Maximum Ratings Ta=25
Parameter
Drain-Source Voltage
Gate-Source Voltage
DrainCurrent
(Note 1)
-Continuous
-Pulsed
(Note 2)
PowerDissipation
(Note 1)
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
P
D
R
JA
Symbol
V
DSS
V
GSS
I
D
Rating
60
20
300
800
350
357
-65 to +150
Unit
V
V
mA
mA
mW
W
T
j
, T
STG
Notes: 1. Device mounted on FR-4 PCB.
2. Pulse width
£10mS,
Duty Cycle
£1%.
Electrical Characteristics Ta = 25
Parameter
Drain-Source Breakdown Voltage
(Note 3)
Zero Gate Voltage Drain Current
(Note 3)
Gate-Body Leakage
(Note 3)
Gate Threshold Voltage
(Note 3)
Static Drain-Source On-Resistance
(Note 3)
Forward Transfer Admittance
(Note 3)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Symbol
V
DSS
I
DSS
I
GSS
V
GS(th)
R
DS (ON)
|Y
fs
|
C
iss
C
oss
C
rss
V
DS
= 25V, V
GS
= 0V,f = 1.0MHz
Testconditons
V
GS
= 0V, I
D
= 10
A
Min
60
1.0
10
1.0
1.6
2.5
2.0
3.0
80
50
25
5.0
ms
pF
pF
pF
Typ
Max
Unit
V
A
A
V
V
DS
= 60V, V
GS
= 0V
V
GS
=
20V, V
DS
= 0V
V
DS
= 10V, I
D
= 1mA
V
GS
= 10V, I
D
= 0.5A
V
GS
= 5V, I
D
= 0.05A
V
GS
= 10V, V
DS
= 0 .2 A
Note: 3. Short duration test pulse used to minimize self-heating effect.
Marking
Marking
702.
http://www.twtysemi.com
sales@twtysemi.com
0-0.1
3.collector
3 DRAIN
4008-318-123
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TYSEMI [ TY Semiconductor Co., Ltd ]
