SMD
Type
Transistors
IC
MOSFET
Product specification
2N7002T
SOT-523
+0.1
1.6
-0.1
Unit: mm
■
Features
●
Low On-Resistance
●
Low Gate Threshold Voltage
●
Low Input Capacitance
●
Fast Switching Speed
●
Low Input/Output Leakage
2
+0.1
1.0
-0.1
+0.05
0.2
-0.05
+0.01
0.1
-0.01
1
+0.15
1.6
-0.15
0.55
+0.25
0.3
-0.05
+0.1
0.5
-0.1
●
Ultra-Small Surface Mount Package
+0.05
0.75
-0.05
0.35
3
■
Absolute Maximum Ratings Ta = 25℃
Parameter
Drain-Source voltage
Gate-Source Voltage
Drain Current - Continuous
- Pulsed Note(1)
Power dissipation
@ T
A
= 25℃
Symbol
V
DS
V
GS
I
D
P
D
T
J
, T
stg
Rating
60
±20
115
800
0.15
-55 to +150
W
℃
Unit
V
V
mA
Operating and storage junction temperature range
Notes: 1. Pulse width limited by maximum junction temperature.
■
Electrical Characteristics Ta = 25℃
Parameter
Drain-source breakdown voltage
Gate-threshold voltage
Gate-body leakage
Zero gate voltage drain current
On-state drain current
Drain-source on-resistance
Forward tran conductance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on Time
Turn-off Time
Symbol
V
(BR)DSS
V
GS(th)
l
GSS
I
DSS
I
D(ON)
R
DS(on)
g
ts
C
iss
C
oss
C
rss
t
d(on)
t
d(off)
V
DD
= 30 V, R
L
= 150 Ω
I
D
=0.2 A, V
GEN
= 10 V, R
G
= 25Ω
V
DS
=25 V, V
GS
=0 V, f=1 MHz
Test conditons
V
GS
=0 V, I
D
=10μA
V
DS
=V
GS
, I
D
=250μA
V
DS
=0 V, V
GS
=±20 V
V
DS
=60 V, V
GS
=0 V
T
C
= 125℃
V
GS
=10 V, V
DS
=7.5 V
V
GS
=10 V, I
D
=500 mA @T
j
= 125℃
V
GS
=5 V, I
D
=50 mA
V
DS
=10 V, I
D
=200 mA
80
22
11
2
7.0
11
50
25
7
20
20
ns
ns
pF
0.5
13.5
7.5
ms
Min
60
1
1.76
2
±10
1
500
A
Ω
nA
μA
Typ
Max
Unit
V
■
Marking
Marking
702
http://www.twtysemi.com
sales@twtysemi.com
0.8
1.Gate
2.Soruce
3.Drain
+0.1
-0.1
4008-318-123
1 of 1
+0.05
0.8
-0.05
TYSEMI [ TY Semiconductor Co., Ltd ]
