Product specification
2PA1576
Features
Low current (max. 100 mA)
Low voltage (max. 40 V).
Low collector capacitance (typ. 2.5 pF).
1 Emitter
2 Base
3 Collector
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Peak collector current
Peak base current
Total power dissipation
Storage temperature
Junction temperature
Operating ambient temperature
thermal resistance from junction to ambient
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
R
th j-a
Rating
-50
-40
-5
-100
-200
-200
200
-65 to +150
150
-65 to +150
625
K/W
Unit
V
V
V
mA
mA
mA
mW
Electrical Characteristics Ta = 25
Parameter
Collector cut-off current
Emitter cut-off current
DC current gain
2PA1576Q
2PA1576R
2PA1576S
Collector-emitter saturation voltage
Collector capacitance
Transition frequency
* Pulse test: tp
300 ìs; ä
0.02.
Symbol
I
CBO
I
EBO
Testconditons
I
E
= 0; V
CB
= -30 V
I
E
= 0; V
CB
= -30 V; T
j
= 150
I
C
= 0; V
EB
= -4 V
120
180
270
Min
Typ
Max
-100
-5
-100
270
390
560
-500
2.5
100
3.5
mV
pF
MHz
Unit
nA
ìA
nA
h
FE
I
C
= -1 mA; V
CE
= -6 V
V
CE(sat)
I
C
= -50 mA; I
B
= -5 mA; *
C
c
f
T
I
E
= ie = 0; V
CB
= -12 V; f = 1 MHz
I
C
= -2 mA; V
CE
= -12 V; f = 100 MHz
h
FE
Classification
TYPE
Marking
2PA1576Q
FQ
2PA1576R
FR
2PA1576S
FS
http://www.twtysemi.com
sales@twtysemi.com
4008-318-123
1 of 1
TYSEMI [ TY Semiconductor Co., Ltd ]
