Product specification
2PB709AW
Features
High collector current (max. 100 mA).
Low collector-emitter saturation voltage (max. 500 mV).
1 Emitter
2 Base
3 Collector
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Peak collector current
Total power dissipation
Storage temperature
Junction temperature
Operating ambient temperature
Thermal resistance from junction to ambient
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CM
P
tot
T
stg
T
j
T
amb
R
th j-a
Rating
-45
-45
-6
-100
-200
200
-65 to +150
150
-65 to +150
625
K/W
Unit
V
V
V
mA
mA
mW
Electrical Characteristics Ta = 25
Parameter
Collector cut-off current
Symbol
I
CBO
Testconditons
I
E
= 0; V
CB
= -45 V
I
E
= 0; V
CB
= -45 V; T
j
= 150
Emitter cut-off current
DC current gain
2PB709AQW
2PB709ARW
2PB709ASW
Collector-emitter saturation voltage
Collector capacitance
Transition frequency
2PB709AQW
2PB709ARW
2PB709ASW
* Pulse test: tp
300 ìs; ä
0.02.
I
EBO
I
C
= 0; V
EB
= -5 V
160
210
290
260
340
460
-500
5
60
70
80
mV
pF
Min
Typ
Max
-10
-5
-10
Unit
nA
ìA
nA
h
FE
I
C
= -2 mA; V
CE
= -10 V
V
CE(sat)
I
C
= -100 mA; I
B
= -10 mA; *
C
c
I
E
= ie = 0; V
CB
= -10 V; f = 1 MHz
f
T
I
C
= -1 mA; V
CE
= -10 V;f = 100 MHz
MHz
h
FE
Classification
TYPE
Marking
2PB709AQW
N5
2PB709ARW 2PB709ASW
N7
N9
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4008-318-123
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TYSEMI [ TY Semiconductor Co., Ltd ]
