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2SA1162 参数 Datasheet PDF下载

2SA1162图片预览
型号: 2SA1162
PDF下载: 下载PDF文件 查看货源
内容描述: 高电压和高电流: VCEO = -50 V, IC = 150 MA(最大) [High voltage and high current: VCEO = -50 V, IC = 150 mA (max)]
分类和应用: 晶体晶体管光电二极管
文件页数/大小: 2 页 / 165 K
品牌: TYSEMI [ TY Semiconductor Co., Ltd ]
 浏览型号2SA1162的Datasheet PDF文件第2页  
Product specification
2SA1162
SOT-23
Features
High voltage and high current: V
CEO
= -50 V, I
C
= ?150 mA (max)
+0.1
2.4
-0.1
Unit: mm
+0.1
2.9
-0.1
+0.1
0.4
-0.1
Low noise: NF = 1dB (typ.), 10dB (max)
Small package
+0.1
1.3
-0.1
1
+0.1
0.95
-0.1
+0.1
1.9
-0.1
2
0.55
0.4
3
+0.05
0.1
-0.01
+0.1
0.97
-0.1
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
Tj
T
stg
Rating
-50
-50
-5
-150
-30
150
125
-55 to +125
Unit
V
V
V
mA
mA
mW
Electrical Characteristics Ta = 25
Parameter
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Collector output capacitance
Noise figure
Transition frequency
Symbol
I
CBO
I
EBO
h
FE
Testconditons
V
CB
= -50 V, I
E
= 0
V
EB
= -5 V, I
C
= 0
V
CE
= -6 V, I
C
= -2 mA
70
-0.1
4
1.0
80
Min
Typ
Max
-0.1
-0.1
400
-0.3
7
10
V
pF
dB
MHz
Unit
A
A
V
CE (sat)
I
C
= -100 mA, I
B
= -10 mA
C
ob
NF
f
T
V
CB
= -10 V, I
E
= 0, f = 1 MHz
V
CE
= -6 V, I
C
= -0.1 mA, f = 1 kHz,
Rg = 10 k
V
CE
= -10 V, I
C
= -1 mA
h
FE
Classification
Marking
Rank
hFE
70
SO
O
140
120
SY
Y
240
SR
GR
200
400
+0.1
0.38
-0.1
0-0.1
http://www.twtysemi.com
sales@twtysemi.com
4008-318-123
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