DIP
Type
SMD Type
SMD
Type
Transistor
IC
Transistor
Transistors
Product specification
2SA1163
SOT-23
+0.1
2.9
-0.1
+0.1
0.4
-0.1
Unit: mm
High voltage.
+0.1
2.4
-0.1
Small package.
High hFE.
Low noise.
+0.1
1.3
-0.1
1
+0.1
0.95
-0.1
+0.1
1.9
-0.1
2
0.55
0.4
Features
3
+0.05
0.1
-0.01
+0.1
0.97
-0.1
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
T
j
T
stg
Rating
-120
-120
-5
-100
-20
150
125
-55 to +125
Unit
V
V
V
mA
mA
mW
Electrical Characteristics Ta = 25
Parameter
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Noise figure
Symbol
I
CBO
I
EBO
h
FE
Testconditons
V
CB
= -120 V, I
E
= 0
V
EB
= -5 V, I
C
= 0
V
CE
= -6 V, I
C
= -2 mA
200
Min
Typ
Max
-0.1
-0.1
700
-0.3
100
4
1.0
10
V
MHz
pF
dB
Unit
ìA
ìA
V
CE (sat)
I
C
= -10 mA, I
B
= -1 mA
f
T
C
ob
NF
V
CE
= -6 V, I
C
= -1 mA
V
CB
= -10 V, I
E
= 0, f = 1 MHz
V
CB
=-6 V, I
C
=-0.1 mA, f=1 kHz,R
g
=10 kÙ
h
FE
Classification
Marking
Rank
hFE
CG
GR
200 400
CL
BL
350 700
http://www.twtysemi.com
sales@twtysemi.com
4008-318-123
+0.1
0.38
-0.1
0-0.1
1 of 1
TYSEMI [ TY Semiconductor Co., Ltd ]
