Product specification
2SA1252
SOT-23
+0.1
2.9
-0.1
+0.1
0.4
-0.1
Unit: mm
Features
+0.1
2.4
-0.1
High V
EBO
.
Wide ASO and high durability against breakdown.
+0.1
1.3
-0.1
1
+0.1
0.95
-0.1
+0.1
1.9
-0.1
2
0.55
0.4
3
+0.05
0.1
-0.01
0.97
+0.1
0.38
-0.1
+0.1
-0.1
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current (pulse)
Collector dissipation
Jumction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
T
j
T
stg
Rating
-60
-50
-15
-150
-300
200
125
-55 to +125
Unit
V
V
V
mA
mA
mW
Electrical Characteristics Ta = 25
Parameter
Collector cutoff current
Emitter cutoff current
DC current Gain
Gain bandwidth product
Output capacitance
Collector-emitter saturation voltage
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Symbol
Ic
BO
I
EBO
h
FE
f
T
C
ob
Testconditons
V
CB
= -40V , I
E
= 0
V
EB
= -10V , I
C
= 0
V
CE
= -6V , I
C
= -1mA
V
CE
= -6V , I
C
= -1mA
V
CB
= -6V , f = 1MHz
90
100
3.5
-0.5
-60
-50
-15
Min
Typ
Max
-0.1
-0.1
560
MHz
pF
V
V
V
V
Unit
ìA
ìA
V
CE(sat)
I
C
= -50mA , I
B
= -5mA
V
(BR)CBO
I
C
= -10ìA , I
E
= 0
V
(BR)CEO
I
C
= -1mA , R
BE
=
V
(BR)EBO
I
E
= -10ìA , I
C
= 0
h
FE
Classification
Marking
hFE
90
D4
180
D5
135
270
D6
200
400
D7
300
600
http://www.twtysemi.com
sales@twtysemi.com
0-0.1
4008-318-123
1 of 1
TYSEMI [ TY Semiconductor Co., Ltd ]
