DIP
Type
SMD Type
SMD
Type
Transistor
IC
Transistor
Transistors
Product specification
2SA1255
SOT-23
+0.1
2.9
-0.1
+0.1
0.4
-0.1
Unit: mm
+0.1
2.4
-0.1
Features
High voltage.
Small package.
+0.1
1.3
-0.1
1
2
0.95
+0.1
-0.1
+0.1
1.9
-0.1
0.55
0.4
3
+0.05
0.1
-0.01
+0.1
0.97
-0.1
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
T
j
T
stg
Rating
-200
-200
-5
-50
-20
150
125
-55 to +125
Unit
V
V
V
mA
mA
mW
Electrical Characteristics Ta = 25
Parameter
Collector cut-off current
Emitter cut-off current
Collector-base breakdown voltage
Collector-emitter breakdown voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
Turn-on time
Storage time
Fall time
Symbol
I
CBO
I
EBO
Testconditons
V
CB
= -200 V, I
E
= 0
V
EB
= -5 V, I
C
= 0
-200
-200
70
-0.2
-0.75
50
100
3
0.3
2
0.4
7
240
-1
-1.5
V
V
MHz
pF
ìs
ìs
ìs
Min
Typ
Max
-0.1
-0.1
Unit
ìA
ìA
V
V
V
(BR)CBO
I
C
= -0.1 mA, I
E
= 0
V
(BR)CEO
I
C
= -1 mA, I
B
= 0
h
FE
V
CE
= -3 V, I
C
= -10 mA
V
CE (sat)
I
C
= -10 mA, I
B
= -1 mA
V
BE (sat)
I
C
= -10 mA, I
B
= -1 mA
f
T
C
ob
ton
tstg
tf
V
CE
= -10 V, I
C
= -2 mA
V
CB
= -10 V, I
E
= 0, f = 1 MHz
pulse width = 5ìs,duty cycle 2
I
B2
=-I
B1
=0.6 Ma
V
CC
=-50V,I
C
=-6mA
h
FE
Classification
Marking
Rank
hFE
OO
O
70 140
OY
Y
120 240
http://www.twtysemi.com
sales@twtysemi.com
4008-318-123
+0.1
0.38
-0.1
0-0.1
1 of 1
TYSEMI [ TY Semiconductor Co., Ltd ]
