Product specification
2SA1338
SOT-23
Unit: mm
Adoption of FBET process.
+0.1
2.4
-0.1
High breakdown voltage : V
CEO
=-50V.
Large current capacitiy and high f
T
.
Ultrasmall-sized package permitting sets
to be smallsized, slim.
+0.1
1.3
-0.1
1
+0.1
0.95
-0.1
+0.1
1.9
-0.1
2
0.55
0.4
Features
+0.1
2.9
-0.1
+0.1
0.4
-0.1
3
+0.05
0.1
-0.01
0.97
+0.1
0.38
-0.1
+0.1
-0.1
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current (pulse)
Collector dissipation
Jumction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
T
j
T
stg
Rating
-60
-50
-5
-500
-800
200
150
-55 to +150
Unit
V
V
V
mA
mA
mW
Electrical Characteristics Ta = 25
Parameter
Collector cutoff current
Emitter cutoff current
DC current Gain
Gain bandwidth product
Common base output capacitance
Collector-to-emitter saturation voltage
Base-to-emitter saturation voltage
Collector-to-base breakdown voltage
Collector-to-emitter breakdown voltage
Emitter-to-base breakdown voltage
Turn-on time
Storage time
Fall time
Symbol
Ic
BO
I
EBO
h
FE
f
T
Cob
Testconditons
V
CB
= -40V , I
E
= 0
V
EB
= -4V , I
C
= 0
V
CE
= -5V , I
C
= -10mA
V
CE
= -10V , I
C
= -50mA
V
CB
= -10V , f = 1MHz
100
200
5.6
0.15
0.8
-60
-50
-5
70
V
CC
= 20V, I
C
= -10I
B1
= -10I
B2
= 100mA
400
50
0.4
1.2
Min
Typ
Max
-0.1
-0.1
560
MHz
pF
V
V
V
V
V
ns
ns
ns
Unit
ìA
ìA
V
CE(sat)
I
C
= -100mA , I
B
=-10mA
V
BE(sat)
I
C
= -100mA , I
B
=-10mA
V
(BR)CBO
I
C
= -10ìA , I
E
= 0
V
(BR)CEO
I
C
= -100ìA , R
BE
=
V
(BR)EBO
I
E
= -10ìA , I
C
= 0
t
on
t
stg
t
f
h
FE
Classification
Marking
Rank
hFE
100
4
200
5
140 280
AL
6
200 400
7
280 560
0-0.1
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4008-318-123
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TYSEMI [ TY Semiconductor Co., Ltd ]
