SMD Type
Product specification
2SA1364
Features
High Voltage V
CEO
= -60V
High Collector Current (I
C
= -1A)
High Collector Dissipation P
C
= 500mW
Small Package For Mounting
Complementary to 2SC3444
Absolute Maximum Ratings Ta = 25
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Peak Collector Current
Collector Power Dissipation
Jumction temperature
Storage temperature Range
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CM
P
C
T
j
T
stg
Rating
-60
-60
-6
-1
-2
500
150
-55 to +150
Unit
V
V
V
A
A
mW
Electrical Characteristics Ta = 25
Parameter
Collector Cut-off Current
Emitter Cut-off Current
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
DC Current Gain
Collector-Emitter Saturation Voltage
Transition Frequency
Collector Output Capacitance
Symbol
I
CBO
I
EBO
Testconditons
V
CB
= -50V , I
E
= 0
V
EB
= -4V , I
C
= 0
-60
-60
-6
55
-0.11
85
22
300
-0.3
V
MHz
pF
Min
Typ
Max
-0.2
-0.2
Unit
ìA
ìA
V
V
V
V
(BR)CEO
I
C
= -2mA , R
BE
=
V
(BR)CBO
I
C
= -10ìA , I
E
= 0
V
(BR)EBO
I
E
= -10ìA , I
C
= 0
h
FE
V
CE
= -4V , I
C
= 100mA
V
CE(sat)
I
C
= -500mA , I
B
= -25mA
f
T
C
ob
V
CE
= -2V , I
E
= 10mA
V
CB
= -10V , I
E
= 0 , f = 1MHz
h
FE
Classification
Marking
Rank
hFE
55
C
110
90
C
D
180
150
E
300
1
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TYSEMI [ TY Semiconductor Co., Ltd ]
