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2SA1368 参数 Datasheet PDF下载

2SA1368图片预览
型号: 2SA1368
PDF下载: 下载PDF文件 查看货源
内容描述: 高电压VCEO = -100V高集电极电流( ICM = -800mA )小型封装安装 [High Voltage VCEO = -100V High Collector Current (ICM = -800mA) Small Package For Mounting]
分类和应用: 晶体晶体管信息通信管理
文件页数/大小: 3 页 / 408 K
品牌: TYSEMI [ TY Semiconductor Co., Ltd ]
 浏览型号2SA1368的Datasheet PDF文件第2页浏览型号2SA1368的Datasheet PDF文件第3页  
SMD Type
Product specification
2SA1368
Features
High Voltage V
CEO
= -100V
High Collector Current (I
CM
= -800mA)
High Collector Dissipation P
C
= 500mW
Small Package For Mounting
Complementary to 2SC3438
Absolute Maximum Ratings Ta = 25
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Peak Collector Current
Collector Power Dissipation
Jumction temperature
Storage temperature Range
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CM
P
C
T
j
T
stg
Rating
-100
-100
-5
-500
-800
500
150
-55 to +150
Unit
V
V
V
mA
mA
mW
Electrical Characteristics Ta = 25
Parameter
Collector Cut-off Current
Emitter Cut-off Current
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
DC Current Gain
Collector-Emitter Saturation Voltage
Transition Frequency
Collector Output Capacitance
Symbol
I
CBO
I
EBO
Testconditons
V
CB
= -50V , I
E
= 0
V
EB
= -2V , I
C
= 0
-100
-100
-5
55
-0.15
130
11
300
-0.5
V
MHz
pF
Min
Typ
Max
-0.5
-0.5
Unit
ìA
ìA
V
V
V
V
(BR)CEO
I
C
= -1mA , R
BE
=
V
(BR)CBO
I
C
= -10ìA , I
E
= 0
V
(BR)EBO
I
E
= -10ìA , I
C
= 0
h
FE
V
CE
= -10V , I
C
= -10mA
V
CE(sat)
I
C
= -150mA , I
B
= -15mA
f
T
C
ob
V
CE
= -10V , I
E
= 10mA
V
CB
= -10V , I
E
= 0 , f = 1MHz
h
FE
Classification
Marking
Rank
hFE
55
C
110
90
E
D
180
150
E
300
http://www.twtysemi.com
sales@twtysemi.com
4008-318-123
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