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2SA1384 参数 Datasheet PDF下载

2SA1384图片预览
型号: 2SA1384
PDF下载: 下载PDF文件 查看货源
内容描述: 高电压: VCBO = -300V , VCEO = -300V补充到2SC3515 [High Voltage: VCBO = -300V , VCEO = -300V Complementary to 2SC3515]
分类和应用: 晶体晶体管放大器
文件页数/大小: 4 页 / 837 K
品牌: TYSEMI [ TY Semiconductor Co., Ltd ]
 浏览型号2SA1384的Datasheet PDF文件第2页浏览型号2SA1384的Datasheet PDF文件第3页浏览型号2SA1384的Datasheet PDF文件第4页  
SMD Type
Product specification
2SA1384
Features
High Voltage: V
CBO
= -300V , V
CEO
= -300V
Low Saturation Voltage: V
CE(sat)
= -0.5V (max)
Small Collector Output Capacitance: C
ob
= 6pF
P
C
= 1 to 2W (mounted on ceramic substrate)
Small Flat Package
Complementary to 2SC3515
Absolute Maximum Ratings Ta = 25
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Collector Power Dissipation
Jumction temperature
Storage temperature Range
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
P
C *
T
j
T
stg
Rating
-300
-300
-8
-100
-20
500
1000
150
-55 to +150
Unit
V
V
V
mA
mA
mW
* 2SA1384 mounted on ceramic substrate (250 mm
2
x 0.8 t)
Electrical Characteristics Ta = 25
Parameter
Collector Cut-off Current
Emitter Cut-off Current
Collector-base Breakdown Voltage
Collector-emitter Breakdown Voltage
DC Current Gain
Collector-Emitter Saturation Voltage
Base-emitter Saturation Voltage
Transition Frequency
Collector Output Capacitance
Symbol
I
CBO
I
EBO
Testconditons
V
CB
= -300V , I
E
= 0
V
EB
= -8V , I
C
= 0
-300
-300
30
150
-0.5
-1.0
50
70
6
8
V
V
MHz
pF
Min
Typ
Max
-0.1
-0.1
Unit
ìA
ìA
V
V
V
(BR)CBO
I
C
= -0.1mA , I
E
= 0
V
(BR)CEO
I
C
= -1mA , I
B
= 0
h
FE
V
CE
= -10V , I
C
= -20mA
V
CE(sat)
I
C
= -20mA , I
B
= -2mA
V
BE(sat)
I
C
= -20mA , I
B
= -2mA
f
T
C
ob
V
CE
= -10V , I
C
= -20mA
V
CB
= -20V , I
E
= 0 , f = 1MHz
http://www.twtysemi.com
sales@twtysemi.com
4008-318-123
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