SMD Type
Transistors
Product specification
2SA1412-Z
TO-252
+0.15
1.50
-0.15
Unit: mm
2.30
+0.8
0.50
-0.7
+0.1
-0.1
Features
High Voltage: V
CEO
=-400V
+0.2
9.70
-0.2
6.50
+0.2
5.30
-0.2
+0.15
-0.15
+0.1
0.80
-0.1
+0.15
0.50
-0.15
0.127
max
2.3
4.60
+0.15
-0.15
+0.1
0.60
-0.1
+0.28
1.50
-0.1
+0.25
2.65
-0.1
+0.15
5.55
-0.15
1 Base
2 Collector
3 Emitter
Absolute Maximum Ratings Ta = 25
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current (DC)
Collector Current (Pulse) *1
Total power Dissipation (Ta=25
Junction Tmeperature
Storage Temperature
*1 pw 10ms,Duty Cycle 50%
*2 When mounted on ceramic substrate of 7.5cm
2
X0.7mm
) *2
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
C
P
T
T
j
T
stg
Rating
-400
-400
-7
-2
-4
2
150
-55 to 150
Unit
V
V
V
A
A
W
http://www.twtysemi.com
sales@twtysemi.com
4008-318-123
3
.8
0
High speed:tr 0.7ìs
1 of 2
TYSEMI [ TY Semiconductor Co., Ltd ]
