Product specification
SOT-23
Unit: mm
Features
High speed switching: t
stg
=110ns.
+0.1
2.4
-0.1
+0.1
2.9
-0.1
+0.1
0.4
-0.1
+0.1
1.3
-0.1
High gain bandwidth product: f
T
=510MHz.
1
+0.1
0.95
-0.1
+0.1
1.9
-0.1
2
0.55
0.4
3
+0.05
0.1
-0.01
0.97
+0.1
0.38
-0.1
+0.1
-0.1
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Maximum Total power dissipation
at 25
ambient temperature
T
j
T
stg
150
-55 to +150
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
T
Rating
-40
-40
-5
-200
200
Unit
V
V
V
mA
mW
Maximum Junction temperature
Maximum Storage temperature
Electrical Characteristics Ta = 25
Parameter
Collector cutoff current
Emitter cutoff current
DC current gain *
Collector-emitter saturation voltage *
Base-emitter saturation voltage *
Gain bandwidth product
Output capacitance
Turn-on time
Storage time
Turn-off time
*. PW
350ìs,duty cycle 2%
Symbol
I
CBO
I
EBO
h
FE
Testconditons
V
CB
= -30V, I
E
=0
V
EB
= -3V, I
C
=0
V
CE
= -1V , I
C
= -10mA
V
CE
= -1V , I
C
= -100mA
V
CE(sat)
I
C
= -50mA , I
B
= -5mA
V
BE(sat)
I
C
= -50mA , I
B
= -5mA
f
T
C
ob
t
on
t
stg
t
off
V
CE
= -20V , I
E
= 10mA
V
CB
= -5V , I
E
= 0 , f = 1.0MHz
V
CC
= -3V ,
I
C
= -10mA ,
I
B1
= -I
B2
= -1mA
110
200
75
25
180
100
-0.1
-0.8
510
2.5
4.5
70
225
300
-0.4
-0.95
V
V
MHz
pF
ns
ns
ns
Min
Typ
Max
-100
-100
300
Unit
nA
nA
h
FE
Classification
Marking
hFE
Y22
75 150
Y23
100
200
Y24
150
300
0-0.1
http://www.twtysemi.com
sales@twtysemi.com
4008-318-123
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TYSEMI [ TY Semiconductor Co., Ltd ]
