Product specification
2SA1463
Features
High speed,high voltage switching.
Low Collector Saturation Voltage
Absolute Maximum Ratings Ta = 25
Parameter
Collector to base voltage
Collecto to emitter voltage
Emitter to base voltage
Collector current(DC)
Collector current(Pulse)*
Total power dissipation
Junction temperature
Storage temperature
*.pw 10 ms,Duty Cycle 50%
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
C
P
T
T
j
T
stg
Rating
-60
-45
-5.0
-1.0
-2.0
20
150
-55 to +150
Unit
V
V
V
A
A
W
Electrical Characteristics Ta = 25
Parameter
Collector cutoff current
Emitter cutoff current
DC current gain *
Collector-emitter saturation voltage *
Base-emitter saturation voltage *
Gain bandwidth product
Output capacitance
Turn-on time
Storage time
Turn-off time
* Pulse test: tp
350 ìs; d
0.02.
Symbol
I
CES
I
EBO
h
FE
1
h
FE
2
Testconditons
V
CE
= -45V, R
BE
=0
V
EB
= -4V, I
C
=0
V
CE
= -10V , I
C
= -50mA
V
CE
= -10V , I
C
= -500mA
60
60
-0.26
-0.98
300
400
11
25
I
C
= -500mA , I
B1
= I
B1
= -50mA
46
62
25
40
70
100
-0.6
-1.2
V
V
MHz
pF
ns
ns
ns
Min
Typ
Max
-0.5
-0.5
200
Unit
ìA
ìA
V
CE(sat)
I
C
= -500mA , I
B
= -50mA
V
BE(sat)
I
C
= -500mA , I
B
= -50mA
f
T
C
ob
t
on
t
stg
t
off
V
CE
= -10V , I
E
= 100mA
V
CB
= -10V , I
E
= 0 , f = 1.0MHz
h
FE
Classification
Marking
hFE
1L
60 120
1K
100
200
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4008-318-123
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TYSEMI [ TY Semiconductor Co., Ltd ]
