SMD Type
Product specification
Transistors
2SA1576A
Features
Excellent hFE linearity.
1 Emitter
2 Base
3 Collector
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
Rating
-60
-50
-6
-0.15
0.2
150
-55 to +150
Unit
V
V
V
A
W
Electrical Characteristics Ta = 25
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
I
C
=-50ìA
I
C
=-1mA
I
E
=-50ìA
V
CB
=-60V
V
EB
=-6V
Testconditons
Min
-60
-50
-6
-0.1
-0.1
-0.5
120
140
4.0
5.0
560
MHz
pF
Typ
Max
Unit
V
V
V
ìA
ìA
V
V
CE(sat)
I
C
/I
B
=-50mA/-5mA
h
FE
f
T
C
ob
V
CE
=-6V, I
C
=-1mA
V
CE
=-12V, I
E
=2mA,f=100MHz
V
CB
=-12V, I
E
=0A, f=1MHz
h
FE
Classification
Marking
h
FE
FQ
120 270
FR
180 390
FS
270 560
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TYSEMI [ TY Semiconductor Co., Ltd ]
