SMD Type
Product specification
Transistors
2SA1577
Features
Large I
C
.I
CMAX
. = -500mA
Low V
CE(sat)
. Ideal for low-voltage operation.
1 Emitter
2 Base
3 Collector
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
Rating
-40
-32
-5
-0.5
0.2
150
-55 to +150
Unit
V
V
V
A
W
Electrical Characteristics Ta = 25
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
I
C
= -100ìA
I
C
= -1mA
I
E
= -100ìA
V
CB
= -20V
V
EB
= -4V
Testconditons
Min
-40
-32
-5
-1
-1
-0.6
82
200
7
390
MHz
pF
Typ
Max
Unit
V
V
V
ìA
ìA
V
V
CE(sat)
V
CE
= -3V, I
C
= -100mA
h
FE
f
T
C
ob
I
C
/I
B
= -300mA/-30mA
V
CE
= -5V, I
E
=20mA, f=100MHz
V
CB
= -10V, I
E
=0A, f=1MHz
h
FE
Classification
Marking
h
FE
HP
82 180
HQ
120 270
HR
180 390
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4008-318-123
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TYSEMI [ TY Semiconductor Co., Ltd ]
