SMD Type
Product specification
Transistors
2SA1579
Features
High breakdown voltage.
1 Emitter
2 Base
3 Collector
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
Tj
T
stg
Rating
-120
-120
-5
-50
0.2
150
-55 to +150
Unit
V
V
V
mA
W
Electrical Characteristics Ta = 25
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Output capacitance
Transition frequency
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
I
C
=-50ìA
I
C
=-1mA
I
E
=-50ìA
V
CB
=-100V
V
EB
=-4V
Testconditons
Min
-120
-120
-5
-0.5
-0.5
-0.5
180
140
3.2
560
MHz
pF
Typ
Max
Unit
V
V
V
ìA
ìA
V
V
CE(sat)
I
C
=-10mA, I
B
=-1mA
h
FE
f
T
C
ob
V
CE
=-6V, I
C
=-2mA
V
CE
=-12V, I
E
= 2mA, f=100MHz
V
CB
=-12V, I
E
=0A, f=1MHz
h
FE
Classification
Marking
Rank
hFE
RR
R
180 390
RS
S
270 560
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