Product specification
2SA1580
SOT-23
Unit: mm
High f
T
.
+0.1
2.4
-0.1
Small reverse transfer capacitance.
Adoption of FBET process.
+0.1
1.3
-0.1
1
2
0.95
+0.1
-0.1
+0.1
1.9
-0.1
0.55
0.4
Features
+0.1
2.9
-0.1
+0.1
0.4
-0.1
3
+0.05
0.1
-0.01
0.97
+0.1
0.38
-0.1
+0.1
-0.1
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current (pulse)
Collector dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
cp
P
C
T
j
T
stg
Rating
-70
-60
-4
-50
-100
200
150
-55 to +150
Unit
V
V
V
mA
mA
mW
Electrical Characteristics Ta = 25
Parameter
Collector cutoff current
Emitter cutoff current
DC current gain
Gain bandwidth product
Base-collector time constant
Output capacitance
Reverse transfer capacitance
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Symbol
I
CBO
I
EBO
h
FE
f
T
r
bb
,c
c
C
ob
C
re
Testconditons
V
CB
= -40V, I
E
=0
V
EB
= -3V, I
C
=0
V
CE
= -10V , I
C
= -10mA
V
CE
= -10V , I
C
= -10mA
V
CE
= -10V , I
C
= -10mA
V
CB
= -10V , f = 1.0MHz
V
CB
= -10V , f = 1.0MHz
60
350
700
8
1.7
1.3
-0.6
-1
-70
-60
-4
Min
Typ
Max
-0.1
-1
270
MHz
ps
pF
pF
V
V
V
V
V
Unit
ìA
ìA
V
CE(sat)
I
C
= -20mA , I
B
= -2mA
V
BE(sat)
I
C
= -20mA , I
B
= -2mA
V
(BR)CBO
I
C
= -10ìA , I
E
= 0
V
(BR)CEO
I
C
= -1mA , R
BE
=
V
(BR)EBO
I
E
= -10ìA , I
C
= 0
h
FE
Classification
Marking
Rank
hFE
60
3
120
90
QL
4
180
135
5
270
0-0.1
1
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TYSEMI [ TY Semiconductor Co., Ltd ]
