Product specification
2SA1608
Features
High f
T
: f
T
=400MHz.
1 Emitter
2 Base
3 Collector
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Total power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
T
T
j
T
stg
Rating
-60
-40
-5
-500
150
150
-55 to +150
Unit
V
V
V
mA
mW
Electrical Characteristics Ta = 25
Parameter
Collector cutoff current
Emitter cutoff current
DC current gain *
Collector-emitter saturation voltage *
Base-emitter saturation voltage *
Gain bandwidth product
Output capacitance
Turn-on time
Storage time
Turn-off time
*. PW
350ìs,duty cycle 2%
Symbol
I
CBO
I
EBO
h
FE
Testconditons
V
CB
= -40V, I
E
=0
V
EB
= -4V, I
C
=0
V
CE
= -2V , I
C
= -150mA
75
140
Min
Typ
Max
-100
-100
300
V
V
MHz
8
pF
ns
ns
ns
Unit
nA
nA
V
CE(sat)
I
C
= -500mA , I
B
= -50mA
V
BE(sat)
I
C
= -500mA , I
B
= -50mA
f
T
C
ob
t
on
t
stg
t
off
V
CE
= -10V , I
E
= 20mA
V
CB
= -10V , I
E
= 0 , f = 1.0MHz
V
CC
= -30V ,
I
C
= 150mA ,
I
B1
= -I
B2
= 15mA
150
-0.45 -0.75
-1
400
5
25
70
100
-1.3
h
FE
Classification
Marking
hFE
Y12
75 150
Y13
100
200
Y14
150
300
http://www.twtysemi.com
sales@twtysemi.com
4008-318-123
1 of 1