Product specification
2SA1612
Features
High DC current gain
1 Emitter
2 Base
3 Collector
Absolute Maximum Ratings Ta = 25
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current (DC)
Total power dissipation
Junction temperature
Storage temperature range
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
T
T
j
T
stg
Rating
-120
-120
-5
-50
150
150
-55 to +150
Unit
V
V
V
mA
mW
Electrical Characteristics Ta = 25
Parameter
Collector cutoff current
Emitter cutoff current
DC current gain
Collector-emitter saturation voltage *
Base-emitter voltage
Gain bandwidth product
Output capacitance
*. PW
350ìs,duty cycle 2%
Symbol
I
CBO
I
EBO
h
FE
Testconditons
V
CB
= -120V, I
E
=0
V
EB
= -5V, I
C
=0
V
CE
= -6V , I
C
= -1mA
V
CE
= -6V , I
C
= -0.1mA *
V
CE(sat)
I
C
= -10mA , I
B
= -1mA
V
BE
f
T
C
ob
V
CE
= -6V , I
C
= -1mA
V
CE
= -6V , I
E
= -1mA
V
CB
= -30V , I
E
= 0 , f = 1.0MHz
135
100
500
500
-0.09
-0.3
V
V
MHz
3
pF
Min
Typ
Max
-50
-50
900
Unit
nA
nA
-0.55 -0.61 -0.65
50
90
2
h
FE
Classification
Marking
h
FE
C15
135 270
C16
200 400
C17
300 600
C18
450 900
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sales@twtysemi.com
4008-318-123
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TYSEMI [ TY Semiconductor Co., Ltd ]
