SMD Type
Product specification
2SA1724
Features
High f
T
(f
T
= 1.5GHz typ).
High Current (I
C
= 300mA).
Adoption of FBET process.
Absolute Maximum Ratings Ta = 25
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Power Dissipation
Jumction temperature
Storage temperature Range
* Mounted on ceramic board (250 mm
2
x 0.8 mm)
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
P
C *
T
j
T
stg
Rating
-30
-20
-3
-300
-600
500
1300
150
-55 to +150
Unit
V
V
V
mA
mA
mW
Electrical Characteristics Ta = 25
Parameter
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Transition Frequency
Collector Output Capacitance
Reverse Transfer Capacitance
Symbol
I
CBO
I
EBO
h
FE
Testconditons
V
CB
= -20V , I
E
= 0
V
EB
= -2V , I
C
= 0
V
CE
= -5V , I
C
= -50mA
V
CE
= -5V , I
C
= -300mA
V
CE(sat)
I
C
= -100mA , I
B
= -10mA
V
BE(sat)
I
C
= -100mA , I
B
= -10mA
f
T
C
ob
C
re
V
CE
= -5V , I
C
= -100mA
V
CB
= -10V , I
E
= 0 , f = 1MHz
V
CB
= -10V , I
E
= 0 , f = 1MHz
15
5
-0.4
-0.9
1.5
4.9
4.4
-1.0
-1.2
V
V
GHz
pF
pF
Min
Typ
Max
-0.1
-0.1
100
Unit
ìA
ìA
Marking
Marking
AJ
http://www.twtysemi.com
sales@twtysemi.com
4008-318-123
1 of 3