SMD Type
Transistors
IC
Product specification
2SA1739
Features
High speed switching.
Low collector-emitter saturation voltage V
CE(sat)
.
1 Emitter
2 Base
3 Collector
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
T
j
T
stg
Rating
-15
-15
-4
-50
-100
150
150
-55 to +150
Unit
V
V
V
mA
mA
mW
Electrical Characteristics Ta = 25
Parameter
Collector-base cutoff current
Emitter-base cutoff current
Forward current transfer ratio
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Turn-on time
Symbol
I
CBO
I
EBO
h
FE
V
CE(sat)
f
T
C
ob
t
on
Testconditons
V
CB
= -8 V, I
E
= 0
V
CE
= -3 V, I
C
= 0
V
CE
= -1 V, I
C
= -10 mA
I
C
= -10 mA, I
B
= -1 mA
V
CB
= -10 V, I
E
= 10 mA, f = 200 MHz
V
CB
= -5 V, I
E
= 0, f = 1 MHz
800
50
-0.1
1500
1
12
Min
Typ
Max
-0.1
-0.1
150
-0.2
V
MHz
pF
ns
Unit
ìA
ìA
Turn-off time
t
off
20
ns
Storage time
t
stg
19
ns
h
FE
Classification
Marking
Rank
h
FE
Q
50 120
AX
R
90 150
No-rank
50 150
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TYSEMI [ TY Semiconductor Co., Ltd ]
